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    MMBTA13 Price and Stock

    Diodes Incorporated MMBTA13-7-F

    TRANS NPN DARL 30V 0.3A SOT23-3
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    DigiKey MMBTA13-7-F Digi-Reel 178,273 1
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    onsemi MMBTA13LT1G

    TRANS NPN DARL 30V 0.3A SOT23-3
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    Micro Commercial Components MMBTA13-TP

    TRANS NPN DARL 30V 0.3A SOT23
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    onsemi SMMBTA13LT1G

    TRANS NPN DARL 30V 0.3A SOT23-3
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    onsemi MMBTA13LT3G

    TRANS NPN DARL 30V 0.3A SOT23-3
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    MMBTA13 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBTA13 Diodes TRANS DARLINGTON BJT NPN 30V 0.3A 3SOT-23 Original PDF
    MMBTA13 Diodes Short Form Selection Guide Original PDF
    MMBTA13 Diodes NPN SURFACE MOUNT DARLINGTON TRANSISTOR Original PDF
    MMBTA13 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MMBTA13 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MMBTA13 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MMBTA13 Galaxy Semi-Conductor Holdings NPN General Purpose Transistor Original PDF
    MMBTA13 General Semiconductor Darlington Bipolar Transistor, NPN, 30V at Tc=25C, SOT-23, 3-Pin Original PDF
    MMBTA13 Infineon Technologies NPN Silicon Darlington Transistor Original PDF
    MMBTA13 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    MMBTA13 Korea Electronics Darlington Transistor Original PDF
    MMBTA13 Micro Commercial Components TRANS DARLINGTON BJT NPN 30V 0.3A 3SOT-23 Original PDF
    MMBTA13 Micro Commercial Components NPN Darlington Amplifier Transistor Original PDF
    MMBTA13 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBTA13 Weitron NPN Transistors Darlington Amplifier Original PDF
    MMBTA13 Diodes Surface Mount Transistors / MOSFET Devices Scan PDF
    MMBTA13 Motorola European Master Selection Guide 1986 Scan PDF
    MMBTA13 Motorola NPN silicon darlington amplifier transistor. Scan PDF
    MMBTA13 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBTA13 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MMBTA13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMMBTA13LT1G

    Abstract: SMMBTA14LT1G
    Text: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318


    Original
    PDF MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G AEC-Q101 OT-23 O-236) SMMBTA13LT1G MMBTA13LT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 / MMBTA64 Ideal for Medium Power Amplification and Switching High Current Gain


    Original
    PDF MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23 OT-23, MIL-STD-202, MMBTA14 100mA,

    Darlington transistor

    Abstract: MMBTA13
    Text: MMBTA13 NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCBO 30 V Emitter Base Voltage VEBO 10 V IC 500 mA Total Device Dissipation


    Original
    PDF MMBTA13 OT-23 100mA, 100MHz Darlington transistor MMBTA13

    Untitled

    Abstract: No abstract text available
    Text: Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc


    Original
    PDF MMBTA13LT1 MMBTA14LT1 236AB)

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
    Text: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage


    Original
    PDF MMBTA13LT1 MMBTA14LT1 MMBTA14LT1 236AB) r14525 MMBTA13LT1/D MMBTA13 MMBTA13LT1 MMBTA14

    MMBTA13

    Abstract: MMBTA14 SMBTA13 SMBTA14 s1M MMBTA13
    Text: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14


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    PDF SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 VPS05161 MMBTA13 EHP00826 MMBTA13 MMBTA14 SMBTA13 SMBTA14 s1M MMBTA13

    MW MARK

    Abstract: MMBTA13 MPSA14
    Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector


    Original
    PDF MMBTA13 MPSA14 OT-23 MMBTA13 MW MARK

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA13LT1G MMBTA14 MMBTA14LT1 MMBTA14LT1G
    Text: MMBTA13LT1G, MMBTA14LT1G Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage


    Original
    PDF MMBTA13LT1G, MMBTA14LT1G MMBTA13LT1/D MMBTA13 MMBTA13LT1 MMBTA13LT1G MMBTA14 MMBTA14LT1 MMBTA14LT1G

    555c

    Abstract: micro transistor 5c 08 marking t1f 555c transistor npn
    Text: MCC MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • NPN Darlington Amplifier Transistor Operating And Storage Temperatures –55OC to +150OC


    Original
    PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA13 MMBTA14 OT-23 100uAdc, 555c micro transistor 5c 08 marking t1f 555c transistor npn

    MMBTA64-7-F

    Abstract: J-STD-020D MMBTA13 MMBTA63 MMBTA64
    Text: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 /MMBTA14 Ideal for Low Power Amplification and Switching


    Original
    PDF MMBTA63 MMBTA64 MMBTA13 /MMBTA14) OT-23 J-STD-020D MIL-STD-202, DS30055 MMBTA64-7-F J-STD-020D MMBTA64

    J-STD-020D

    Abstract: MMBTA13 MMBTA14 MMBTA63
    Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA63 /MMBTA64 Ideal for Medium Power Amplification and Switching


    Original
    PDF MMBTA13 MMBTA14 MMBTA63 /MMBTA64) AEC-Q101 OT-23 DS30047 J-STD-020D MMBTA14 MMBTA63

    transistor D 2395

    Abstract: Motorola 2396
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit


    Original
    PDF MMBTA13LT1 MMBTA14LT1* 236AB) transistor D 2395 Motorola 2396

    MMBTA13

    Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
    Text: MOTOROLA Order this document by MMBTA13LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage


    Original
    PDF MMBTA13LT1/D MMBTA13LT1 MMBTA14LT1* MMBTA13LT1/D* MMBTA13 MMBTA13LT1 MMBTA14 MMBTA14LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR


    Original
    PDF MMBTA13 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 07different

    MMBTA64-7-F

    Abstract: MMBTA13 MMBTA63 MMBTA64
    Text: SPICE MODEL: MMBTA63 MMBTA64 MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 /MMBTA14 SOT-23 A Ideal for Medium Power Amplification and Switching


    Original
    PDF MMBTA63 MMBTA64 MMBTA13 /MMBTA14) OT-23 DS30055 MMBTA64-7-F MMBTA64

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: MMBTA63 MMBTA64 Pb MMBTA63 / MMBTA64 Lead-free PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 /MMBTA14 SOT-23 A Dim Min Max A 0.37 0.51 B 1.20 1.40


    Original
    PDF MMBTA63 MMBTA64 MMBTA13 /MMBTA14) OT-23 MMBTA64 DS30055

    Untitled

    Abstract: No abstract text available
    Text: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel


    Original
    PDF MMBTA13 MMBTA14 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 / MMBTA14 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW


    Original
    PDF MMBTA63 MMBTA64 MMBTA13 MMBTA14) OT-23 OT-23, MIL-STD-202, MMBTA64

    MPSA13

    Abstract: equivalent mpsa14 MMBTA13 MPSA14 PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original
    PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 MPSA13 equivalent mpsa14 MMBTA13 PZTA13

    MMBTA13LT1G

    Abstract: No abstract text available
    Text: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318


    Original
    PDF MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G MMBTA13LT1/D MMBTA13LT1G

    MMBT6426

    Abstract: MMBTA12 MMBTA13 MMBTA14
    Text: This Surface Mount Transistors NATL Darlington Transistors— NPN VCEO V EBO V Min (V) Min MMBT6426 TO-236 (49) 40 40 MMBTA12 Its TO-236 (49) MMBTA13 MMBTA14 •c e s * ■CBO @ VCB @ hpE (j*A) Max (V) Min 12 0.05 30 20.000 30.000 20.000 20 10 0.1 15 TO-236


    OCR Scan
    PDF 003713S T-31-0Ã O-236 MMBT6426 MMBTA12 MMBTA13 MMBTA14 C003713S MMBTA14

    MMBTA13

    Abstract: MMBTA14 MMBTA63 MMBTA64
    Text: MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA13 / MMBTA14 Ideal for Medium Power Amplification and Switching High Current Gain


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    PDF MMBTA63 MMBTA64 MMBTA13 MMBTA14) OT-23, MIL-STD-202, MMBTA64 OT-23 MMBTA14

    MMBTA13

    Abstract: MMBTA14 MMBTA63 MMBTA64
    Text: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M BTA63 / M M BTA64 Ideal for Medium Power Amplification and Switching


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    PDF MMBTA13 MMBTA14 MMBTA63 MMBTA64) OT-23, MIL-STD-202, MMBTA14 OT-23 100mA, MMBTA64

    mmbta12

    Abstract: No abstract text available
    Text: zn i\ micanductor NATL Surface Mount Transistors Type No. Case Style MMBT6426 VcbO VcEO V ebo V Min Min (V) Min TO-236 (49) 40 40 MMBTA12 TO-236 (49) MMBTA13 MMBTA14 •ces * 'CBO @ VCB @lc 4V hFE ce VCE(SAT) VBE(sa T) Max (V) Min Max <v) 1 1 C0b (PF) Max


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    PDF MMBT6426 O-236 MMBTA12 MMBTA13 MMBTA14