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    MGF4963BL

    Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B

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    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs

    MGF4963BL

    Abstract: InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
    Text: 16/Oct./2009 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4963BL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. FEATURES Low noise figure @ f=20GHz


    Original     		PDF 16/Oct MGF4963BL MGF4963BL 20GHz 4000pcs InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C