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    Powerex Power Semiconductors MG800J2YS50A

    IGBT MOD 600V 800A 2900W
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    MG800J2YS50A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG800J2YS50A Mitsubishi TRANS IGBT MODULE N-CH 600V 800A Original PDF
    MG800J2YS50A Powerex IGBTs - Modules, Discrete Semiconductor Products, IGBT MOD CMPCT 600V 800A Original PDF
    MG800J2YS50A Toshiba Original PDF
    MG800J2YS50A Toshiba Compact IGBT Modules & Compact IPM Original PDF
    MG800J2YS50A Toshiba Compact Compact-IGBT Original PDF

    MG800J2YS50A Datasheets Context Search

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    MG800J2YS50A

    Abstract: No abstract text available
    Text: MG800J2YS50A MITSUBISHI IGBT Module MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2


    Original     		PDF MG800J2YS50A 23F22G MG800J2YS50A

    Untitled

    Abstract: No abstract text available
    Text: MG800J2YS50A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 800 Amperes/600 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES)


    Original     		PDF MG800J2YS50A Amperes/600

    Untitled

    Abstract: No abstract text available
    Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2


    Original     		PDF MG800J2YS50A 2-126A2A

    3000 watt ups circuit diagram

    Abstract: 4000 watt power UPS circuit diagram RG103 MG800J2YS50A 07104 JC2000
    Text: MG800J2YS50A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 800 Amperes/600 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES)


    Original     		PDF MG800J2YS50A Amperes/600 125ENT 3000 watt ups circuit diagram 4000 watt power UPS circuit diagram RG103 MG800J2YS50A 07104 JC2000

    TOSHIBA IGBT

    Abstract: No abstract text available
    Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Unit: mm Equivalent Circuit TH1


    Original     		PDF MG800J2YS50A 2-126A1A TOSHIBA IGBT

    Untitled

    Abstract: No abstract text available
    Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Unit: mm Equivalent Circuit TH1


    Original     		PDF MG800J2YS50A 2-126A2A

    Untitled

    Abstract: No abstract text available
    Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. · Enhancement-mode · Thermal output terminal TH Unit: mm Equivalent Circuit TH1


    Original     		PDF MG800J2YS50A 2-126A1A

    MG800J2YS50A

    Abstract: RG412
    Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications Unit: mm • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit Ｃ1


    Original     		PDF MG800J2YS50A 2-126A1A MG800J2YS50A RG412

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    tlp421 equivalent

    Abstract: igbt protection circuit diagram MQ400V1US51A igbt controller IPM module MG400Q2YS60A 110C mg600Q1US59 MG300Q2YS60A MG400V2YS60A
    Text: NEW COMPACT IGBT MODULES WITH INTEGRATED CURRENT AND TEMPERATURE SENSORS By Eric R. Motto, John F. Donlon Application Engineering Powerex Incorporated Abstract – A new family of compact IGBT modules has been developed to bridge the gap between fully integrated IPM devices and basic IGBT modules. The idea of this new family was


    Original     		PDF

    MG400V2YS60A

    Abstract: MG600Q2YS60A MG800J2YS50A W1203 TOSHIBA
    Text: New Product Guide Compact-IGBT Series PRODUCT GUIDE Compact-IGBT Series Outline Equivalent Circuit Package Dimensions Toshiba have developed a low-loss high-power compact IGBT series whose devices are housed in compact packages. These devices are intended mainly for use in high-power inverters and servo amps. The


    Original     		PDF 2-126A1A MG400V2YS60A MG600Q2YS60A MG800J2YS50A W1203 TOSHIBA

    MIG50Q7CSB1X

    Abstract: IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A
    Text: New Product Guide Compact IGBT Modules & Compact IPM NEW PRODUCT GUIDE Compact IGBT Modules Features • The new package technology achieved small and compact size. • The new generation IGBT and FRD chips achieved low loss and low emission noise. • Fault-signal output circuit short circuit and overtemperature is included.


    Original     		PDF E87989 MIG50Q7CSB1X IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A

    Untitled

    Abstract: No abstract text available
    Text: ＰＤＦエラー報告書 該当ページ エラー項目 形名に変な文字が明記されている ヘッダに「ＴＯＳＨＩＢＡ」ロゴや形名が明記されていない フッタに更新日付が明記されていない フッタの更新日付が古い 三ヶ月以上


    Original     		PDF MG800J2YS50A

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG800J2YS50A TOSHIBA IGBT MODULE TENTATIVE SILICON N CHANNEL IGBT MG800J2YS50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH


    OCR Scan     		PDF MG800J2YS50A THIOTH20G 2-126A1A 000707EAA1 B25/85