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    MG15G6 Search Results

    MG15G6 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG15G6EL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15G6EL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15G6EL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15G6EL1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG15G6EL1 Toshiba GTR Module Scan PDF
    MG15G6EL1 Toshiba GTR Module Scan PDF
    MG15G6EL2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15G6EL2 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15G6EM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15G6EM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15G6EM1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG15G6EM1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15G6EM1 Unknown FET Data Book Scan PDF
    MG15G6EM1 Toshiba GTR Module Scan PDF
    MG15G6EM1 Toshiba GTR Module Scan PDF

    MG15G6 Datasheets Context Search

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    Sine wave PWM DC to AC Inverter ics

    Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
    Text: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package


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    PDF TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F TA7327P SSOP10 GT60M303 Sine wave PWM DC to AC Inverter ics ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201

    mg15g6em1

    Abstract: equivalent MG15G6EM1
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in nan MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source OS Resistance


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    PDF MG15G6EM1 mg15g6em1 equivalent MG15G6EM1

    MG15G6EL1

    Abstract: No abstract text available
    Text: MG15G6EL1 QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in 1 Package. . With Built-in Free Wheeling Diodes.


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    PDF MG15G6EL1 TjSa25r MG15G6EL1

    MG15G6EL2

    Abstract: No abstract text available
    Text: MG15G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package . With Built-in Free Wheeling Diode. . High DC Current Gain


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    PDF MG15G6EL2 MG15G6EL2

    MG15G6EM1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


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    PDF MG15G6EM1 MG15G6EM1

    MG15G1AM1

    Abstract: MG15G4GM1 TOSHIBA MG15G4GM1 MG15G6EM1 equivalent MG15G6EM1 LSE 405 MG15
    Text: TOSHIBA -CDISCRET E/OPTO} [ TO 9097250 TOSHIBA DISCRETE/OPTO ¿/oìiììlit 7 DE I T D T aSD O D I L ^ H 90D 1 6 3 9 4 T~39-2y MG15G1AM1 M G 1 5 G 4 G M 1 (450V /15A ) MG15G6EM1 SEMICONDUCTOR TECHNICAL DAÎA EQUIVALENT CIRCUIT OUTLINE T, < D . O in o s:


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    PDF 3f-27 MG15G1AM1 MG15G4GM1 50V/15A) MG15G6EM1 140gr 180gr MG15G4GM1 TOSHIBA MG15G4GM1 MG15G6EM1 equivalent MG15G6EM1 LSE 405 MG15

    MG15G4GL1

    Abstract: toshiba mg15g4gl1 MG15G6EL1 MG15 npn DARLINGTON 15A 248A1 mg15g4
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "TD <DISCRETE/OPTO> V ' r - ‘2 > 3 - ‘3 £ ' 90D 16203 TOSHIBA GTR MODULE SEMICONDUCTOR ¿Tasiiiht DÊjH T O T T E S D O O l b H D E 3 J - MG15G4GL1 MG15G6EL1 TECHNICAL DATA SILIC O N NPN T R IP L E DIFFUSED TYPE


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    PDF MG15G4GL1 MG15G6EL1 MG15G4GL1 MG15G6EL1 110X7 2-48A1A toshiba mg15g4gl1 MG15 npn DARLINGTON 15A 248A1 mg15g4

    MG15G6EL1

    Abstract: MG15G6
    Text: GTR MOOULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G6EL1 HIGH POWER SWIT CH I NG APPLICATIONS. M OT O R C O NTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated from Case. . 6 D a r l i n g t o n T r a n s i s t o r s are Built-ii 1 Package. . W i t h Buil t - i n


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    PDF MG15G6EL1 MG15G6EL1 MG15G6

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


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    PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


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    PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


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    PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


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    PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    6BM8

    Abstract: equivalent MG15G6EM1 st zo 607 2-48A3B
    Text: - 206 - MOS w m m F E T £ 4 ff l/6 B M 8 EM-1 GM-1 + o—- f O 7 V —* - f n < - f f l 7 ? 7 .\-y firftz£ Z tm |- h i k SU GV ; h , i 3 J |1* *1 QU o 4 h i 1— 1 A\ 1*1 JVO-11 -OU 1 OX o i 1 V dss V GSS & U £ JI


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    PDF H-101 6BM8 equivalent MG15G6EM1 st zo 607 2-48A3B

    2sk1029

    Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
    Text: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1


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    PDF 2SK578* 2SK447" 2SK568* 2SK1513" 2SK1029* MG15G1AM1 2SK1333* MG30D1ZM1 MG30D2YM1 MG30G2YM1 2sk1029 MP6702 2sk1513 2SK56 MG15C4HM1 MG50D2DM1

    MG30G2CL3

    Abstract: MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1
    Text: 9097250 TOSHIBA DISCRETE/O PTO TOSHIBA {DISCRETE/OPTO} TO 9 0D 16488 D T- T Ë j | TOT VE h U UUJihMöö Jb p GTR Modules Bipolar Darlington n o te : W A STA G E DARLINGTON, CK):3-STAGE DARLINGTON $:UNDER DEVELOPMENT * :V c e x <s u s i #:UL RECOGNIZED


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    PDF MG100G1AL3 MG200H1ALZ MG30G1BL3 MG50G1BLÃ MG75G1BL1 MG25M1BK1 MG50M1BK1 MG100G1FL1 M6150H1FLI MG30CH1FU MG30G2CL3 MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1