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    MG100J6 Search Results

    MG100J6 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG100J6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J6ES11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J6ES11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J6ES50 Toshiba TRANS IGBT MODULE N-CH 600V 100A 19(2-94A2A) Original PDF
    MG100J6ES50 Toshiba N channel IGBT Original PDF
    MG100J6ES50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100J6ES50 Toshiba N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG100J6ES91 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100J6ES91 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG100J6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Toshiba transistor Ic 100A

    Abstract: MG100J6ES50 toshiba motor on semiconductor 50-5G
    Text: MG100J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.30µs Max (IC = 100A)


    Original     		PDF MG100J6ES50 2-94A2A 000707EAA1 Toshiba transistor Ic 100A MG100J6ES50 toshiba motor on semiconductor 50-5G

    MG100J6ES50

    Abstract: on semiconductor 50-5G
    Text: MG100J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J6ES50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance. l 6 IGBTs built into 1 package. l Enhancement-mode. l High speed : tf = 0.30µs Max (IC = 100A)


    Original     		PDF MG100J6ES50 2-94A2A 000707EAA1 MG100J6ES50 on semiconductor 50-5G

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    Sine wave PWM DC to AC Inverter ics

    Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
    Text: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package


    Original     		PDF TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F TA7327P SSOP10 GT60M303 Sine wave PWM DC to AC Inverter ics ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201

    MG100J6ES1

    Abstract: MG100J6
    Text: MG100J6ES1 GTR MODULE SILICON N CHANNEL IGBT TENTATIVE HIGH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. . 6 I G BTs are B u i l t I n t o 1 P a c k a g e . . Enhancement-Mode . Low Saturation Voltage : V CE s a t = 4 . 0 V ( M a x . )


    OCR Scan     		PDF MG100J6ES1 100mA, MG100J6ES1 MG100J6

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG100J6ES50 MG1 0 0 J 6 E S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG100J6ES50 15/iS 2-94A2A 100//S*

    RG130

    Abstract: igbt toshiba mg MG100J6ES50
    Text: TOSHIBA MG100J6ES50 MG100J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.


    OCR Scan     		PDF MG100J6ES50 100J6ES50 2-94A2A 961001EAA2 RG130 igbt toshiba mg MG100J6ES50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG100J6ES50 MG1 0 0 J 6 E S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG100J6ES50 15/iS 2-94A2A 100jus* 50/us*

    mg100j6es5

    Abstract: No abstract text available
    Text: MG100J6ES50 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . U n it in m m I-0S51O3 \ io ili io 18 ,io. M O TO R C O N T R O L A P P L IC A T IO N S . y 7 - Ml 1 2 - i'ast"- o.n-tab «1 1 0 T h e E le c tro d e s a r e I s o la te d fro m C a se. H ig h I n p u t Im p e d a n c e .


    OCR Scan     		PDF MG100J6ES50 I-0S51O3 mg100j6es5

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100J6ES50 TOSHIBA GTR MODULE M G 1 Q Q SILICON N CHANNEL IGBT J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm 4-05.5± O ,3 MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance, • 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG100J6ES50 J6ES50 2-94A2A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG 1 00J 6 E S 5 0 HIGH P O W E R SWITCHING APPLICATIONS. U n it in mm M O TO R CONTROL APPLICATIONS. • The E lectrodes are Isolated from Case. • H igh In p u t Impedance. • 6 IGBTs B u ilt Into 1 Package.


    OCR Scan     		PDF MG100J6ES50 2-94A2A

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4

    MG200J2YS50

    Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
    Text: MHTEPTEKC www.i-t.su [email protected] Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)


    OCR Scan     		PDF flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


    OCR Scan     		PDF MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45

    MG150N2YS40

    Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
    Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11


    OCR Scan     		PDF T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40

    mg500q1us1

    Abstract: MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5
    Text: .3 UL Approvals List All devices are included in: File number: . E87989 Section number: 4. 1700 V Types MG30V2YS40 . 80* MG90V2YS40 . 80*


    OCR Scan     		PDF E87989 MG50J2YS50. MG50J6F MG75J2YS50. MG75J6ES50 MG100J2YS50 MG100J6ES50 MG150J2YS50 MG200J2YS50 MG7SQ2YS40 mg500q1us1 MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45

    MG75J2YS40

    Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
    Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40


    OCR Scan     		PDF E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44