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    MG100J1ZS40 Search Results

    MG100J1ZS40 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG100J1ZS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG100J1ZS40 Toshiba TRANS IGBT MODULE N-CH 600V 100A 3(2-94D2A) Original PDF
    MG100J1ZS40 Toshiba N channel IGBT Original PDF
    MG100J1ZS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF

    MG100J1ZS40 Datasheets Context Search

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    MG100J1ZS40

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications l High input impedance l High spee : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE (sat) = 3.5V (max)


    Original     		PDF MG100J1ZS40 2-94D2A MG100J1ZS40

    diode 083

    Abstract: MG100J1ZS40
    Text: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High spee : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE (sat) = 3.5V (max)


    Original     		PDF MG100J1ZS40 2-94D2A diode 083 MG100J1ZS40

    MG100J1ZS40

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High spee : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max)


    Original     		PDF MG100J1ZS40 2-94D2A MG100J1ZS40

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)


    OCR Scan     		PDF MG100J1ZS40

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA MG100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100J1ZS40 2-94D2A 100J1ZS40

    4A05 diode

    Abstract: diode 4a05 Toshiba V300 ZS40 igbt toshiba mg MG100J1ZS40 V300 4a05 100/diode 4a05
    Text: MG100J1ZS40 TOSHIBA MG 1 0 0 J 1 Z S 4 0 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG100J1ZS40 2-94D2A 4A05 diode diode 4a05 Toshiba V300 ZS40 igbt toshiba mg MG100J1ZS40 V300 4a05 100/diode 4a05

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT 1 0 0 J 1 Z S 40 M G Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.)


    OCR Scan     		PDF MG100J1ZS40 2-94D2A 100J1ZS40

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 HIGH POW ER SW ITCHIN G APPLICATIONS. M O T O R CON TROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.35/is Max. trr = 0.15//s(M ax.) Low Saturation Voltage : v C E (sat) =3.5V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG100J1ZS40 35/is 15//s Tc-26

    Untitled

    Abstract: No abstract text available
    Text: MG100J1ZS40 TOSHIBA TOSHIBA GTR MODULE M G SILICON N CHANNEL IGBT 1 QQJ1 ZS4 Q Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35,i/s Max. trr = 0.15ju& (Max.) • Low Saturation Voltage


    OCR Scan     		PDF MG100J1ZS40 2-94D2A

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5