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    MBRA160T3 Price and Stock

    onsemi MBRA160T3G

    DIODE SCHOTTKY 60V 1A SMA
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    DigiKey MBRA160T3G Digi-Reel 36,792 1
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    MBRA160T3G Cut Tape 36,792 1
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    MBRA160T3G Reel 35,000 5,000
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    Quest Components MBRA160T3G 2,861
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    New Advantage Corporation MBRA160T3G 5,000 1
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    Win Source Electronics MBRA160T3G 399,856
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    onsemi MBRA160T3

    DIODE SCHOTTKY 60V 1A SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRA160T3 Reel 5,000
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    Bristol Electronics MBRA160T3 2,755
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    MBRA160T3 1,753
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    MBRA160T3 934
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    MBRA160T3 90 12
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    Quest Components MBRA160T3 2,204
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    MBRA160T3 1,402
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    MBRA160T3 72
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    Win Source Electronics MBRA160T3 400,000
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    Aptina Imaging MBRA160T3G

    Rectifier Diode Schottky Si 60V 2.1A 2-Pin SMA T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MBRA160T3G 55,000 5,000
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    onsemi MBRA160T3G.

    Schottky Rectifier, 2.1A, 60V, Do-214Ac; Repetitive Peak Reverse Voltage:60V; Average Forward Current:2.1A; Diode Configuration:Single; Diode Case Style:Do-214Ac (Sma); No. Of Pins:2Pins; Forward Voltage Max:510Mv; Product Range:- Rohs Compliant: Yes |Onsemi MBRA160T3G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRA160T3G. Reel 5,000
    • 1 $0.095
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    MBRA160T3 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRA160T3 Formosa Chip Schottky Barrier Diodes - Silicon epitaxial planer type Original PDF
    MBRA160T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRA160T3-D On Semiconductor Surface Mount Schottky Power Rectifier SMA Power S Original PDF
    MBRA160T3G On Semiconductor 1A 60V Schottky Rectifier Original PDF

    MBRA160T3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRA160T3-D

    Abstract: MBRA160T3G 403D MBRA160T3
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 MBRA160T3/D MBRA160T3-D MBRA160T3G 403D MBRA160T3

    403D

    Abstract: MBRA160T3 3B marking SMA MARKING 14
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 r14525 MBRA160T3/D 403D MBRA160T3 3B marking SMA MARKING 14

    MBRA160T3G

    Abstract: SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 MBRA160T3/D MBRA160T3G SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3

    403D

    Abstract: MBRA160T3 MBRA160T3G
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 MBRA160T3/D 403D MBRA160T3 MBRA160T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3G, NRVBA160T3G MBRA160T3/D

    marking B16 diode

    Abstract: No abstract text available
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 1E-02 1E-03 1E-04 1E-05 1E-06 marking B16 diode

    marking code onsemi Diode B16

    Abstract: 403D MBRA160T3 on semiconductor B16
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 r14525 MBRA160T3/D marking code onsemi Diode B16 403D MBRA160T3 on semiconductor B16

    3B MARKING

    Abstract: No abstract text available
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 1E-02 1E-03 1E-04 1E-05 1E-06 3B MARKING

    403D

    Abstract: MBRA160T3
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 r14525 MBRA160T3/D 403D MBRA160T3

    MBRA160T3G

    Abstract: SMA CASE 403D-02 footprint
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3G, NRVBA160T3G MBRA160T3/D MBRA160T3G SMA CASE 403D-02 footprint

    MBRA160T3G

    Abstract: No abstract text available
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 MBRA160T3/D MBRA160T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3 MBRA160T3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRA160T3G, NRVBA160T3G MBRA160T3/D

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    MBRM110LT1

    Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
    Text: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3


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    PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 MBRM110LT1 MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360

    N1031

    Abstract: AYW marking code IC
    Text: NCP1030, NCP1031 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for 48ĂV Telecom Systems The NCP1030 and NCP1031 are a family of miniature high−voltage monolithic switching regulators with on−chip Power Switch and Startup Circuits. The NCP103x family incorporates in a single IC all the active


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    PDF NCP1030, NCP1031 NCP1030 NCP103x NCP1030. AND8119/D MURA110T3 N1031 AYW marking code IC

    418B-04

    Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
    Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35


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    PDF MBR0520LT1, MBR120LSFT1, MBRM110LT1, MBRA210LT3 MBRS130LT3 MBRS410LT3 MBRD835L MBRD1035CTL MBR2030CTL MBRB2535CTL 418B-04 MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


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    PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original
    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    Specific Device Code MH

    Abstract: No abstract text available
    Text: NUD4021, NUD4022, NUD4023 Advance Information Switching LED Current Source This integrated Switching LED Driver provides a regulated dc current to an LED powered from a standard automotive 12 V system. It is a low cost switching device which utilizes a minimal of external


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    PDF NUD4021, NUD4022, NUD4023 NUD4021 NUD4022/NUD4023 NUD4021/D Specific Device Code MH

    aee6

    Abstract: No abstract text available
    Text: AN-1126 应用笔记 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com 在减少应力的同时获得更大升压:SEPIC乘法升压转换器 作者:Bob Zwicker 摘要


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    PDF AN-1126 4-SC70å AN10134sc-0-8/12 Murata/GRM32ER61E226KE15 Semiconductor/MBRA160T3 Semiconductor/MMSD4148 aee6

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    U401 mosfet

    Abstract: 10uf 25V electrolytic capacitor Power Jack 300 inverter schematic electrolytic capacitor 2200uf/50V power supply with regulator D313 mc33883 circuits smd diode R645 capacitor 2200uf/50v 2238 580 15623 MC33883
    Text: 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual 56800 Hybrid Controller TPPSDDILUM Rev. 0 3/2006 freescale.com 3-Phase Power Stage with DC/DC Inverter Lite User’s Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


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    PDF