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    MBR30XXCT Search Results

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    Untitled

    Abstract: No abstract text available
    Text: GYWW MBR30XXCT MBR30XXCT = G = Y = WW = Specific Device Code Green Compound Year Work Week E09 E09


    Original
    PDF MBR30XXCT

    Untitled

    Abstract: No abstract text available
    Text: MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR3045CT-Y MBR30150CT-Y 2011/65/EU 2002/96/EC O-220AB JESD22-B102 D1405038

    MBR 30100 CT

    Abstract: No abstract text available
    Text: MBR3035CT - MBR30150CT 30.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop


    Original
    PDF MBR3035CT MBR30150CT O-220AB MIL-STD-750, MBR30xxCT O-220AB MBR 30100 CT

    Untitled

    Abstract: No abstract text available
    Text: MBR3035CT - MBR30150CT 30.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop


    Original
    PDF MBR3035CT MBR30150CT O-220AB MIL-STD-750, marke10 MBR30xxCT

    Untitled

    Abstract: No abstract text available
    Text: MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR3035CT MBR30150CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308040

    Schottky

    Abstract: No abstract text available
    Text: MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR3035CT MBR30150CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308040 Schottky

    Untitled

    Abstract: No abstract text available
    Text: MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR3035CT MBR30150CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308040

    MBR 30100 CT

    Abstract: MBR30100 MBR30150CT
    Text: MBR3035CT - MBR30150CT Pb 30.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency


    Original
    PDF MBR3035CT MBR30150CT O-220AB O-220AB solde3045CT MBR3035CT-MBR3045CT MBR3050CT-MBR30150CT MBR3050CT-MBR3060CT MBR3090CT-MBR30100CT MBR 30100 CT MBR30100 MBR30150CT

    Untitled

    Abstract: No abstract text available
    Text: MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR3045CT-Y MBR30150CT-Y 2011/65/EU 2002/96/EC O-220AB JESD22-B102 D1404002

    Untitled

    Abstract: No abstract text available
    Text: MBR3035CT - MBR30150CT 30.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop


    Original
    PDF MBR3035CT MBR30150CT O-220AB O-220AB

    sk a 3050 c

    Abstract: CI 3060 elsys SK 3050 R rs 3060 cj MBR30150CT MBR3035CT
    Text: E MBR3035CT - MBR30150CT TAIWAN SEMICONDUCTOR 30.0 AMPS. Schottky Barrier Rectifiers TO-22GAB RoHS C O M P L IA N C E I - -refry cr VAV 4i: I •Tirwf Features Plastic m aterial used carries U nde rw rite rs Laboratory C lassifications 94V-0 Metal silicon junction, m ajority carrier conduction


    OCR Scan
    PDF MBR3035CT MBR30150CT -220AB 03cJb MBR30150CT) sk a 3050 c CI 3060 elsys SK 3050 R rs 3060 cj MBR30150CT