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    MBN800 Price and Stock

    IBase Technology (USA) MBN800-8L

    SBC 2.133GHZ 1 CORE 64GB/0GB RAM
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    DigiKey MBN800-8L Box 1
    • 1 $500
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    IBase Technology (USA) MBN800-6L

    SBC 2.133GHZ 1 CORE 64GB/0GB RAM
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    DigiKey MBN800-6L Box 1
    • 1 $391.67
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    Power Integrations 1SP0335D2S1-MBN800H45E2

    Gate Drivers ONLY for Hitachi MBN800H45E2 module
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    Mouser Electronics 1SP0335D2S1-MBN800H45E2
    • 1 $130.98
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    Power Integrations 1SP0335D2S1-MBN800H45E2-H

    Gate Drivers Gate Driver ONLY for Hitachi MBN800H45E2-H module
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    Mouser Electronics 1SP0335D2S1-MBN800H45E2-H
    • 1 $130.98
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    Power Integrations 1SP0335D2S1C-MBN800H45E2-H

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, conformal coating
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    Mouser Electronics 1SP0335D2S1C-MBN800H45E2-H
    • 1 -
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    • 100 $184.4
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    MBN800 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBN800E33D Hitachi Semiconductor TRANS IGBT MODULE N-CH 3300V 800A Original PDF

    MBN800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBN800E33D

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-03012 R1 IGBT MODULE MBN800E33D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-03012 MBN800E33D 000cycles) MBN800E33D

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original     		PDF IGBT-SP-10004 MBN800H45E2-H 000cycles)

    MBN800E33D

    Abstract: MBN800
    Text: IGBT MODULE Spec.No.IGBT-SP-03012 R4 P1 MBN800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-03012 MBN800E33D 000cycles) MBN800E33D MBN800

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05015 MBN800E33E 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.


    Original     		PDF IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05015 MBN800E33E 000cycles)

    Hitachi DSA00281

    Abstract: MBN800
    Text: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10014 MBN800H45E2 000cycles) Hitachi DSA00281 MBN800

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-03012 MBN800E33D 000cycles)

    mbn800h45e2h

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R0 MBN800H45E2-H Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10004 MBN800H45E2-H 000cycles) mbn800h45e2h

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10004 MBN800H45E2-H 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-03012 MBN800E33D 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10014 R1 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10014 MBN800H45E2 000cycles)

    MBN800E33E

    Abstract: L120 ls 1802
    Text: IGBT MODULE Spec.No.IGBT-SP-05015 R2 MBN800E33E Silicon N-channel IGBT 3300V E version OUTLINE DRAWING FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input


    Original     		PDF IGBT-SP-05015 MBN800E33E 000cycles) MBN800E33E L120 ls 1802

    circuit diagram of single phase water pump

    Abstract: 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine
    Text: +,7$&+, 3RZHU 6HPLFRQGXFWRU 3URGXFW - ,*%7 PRGXOH - +LJK 9ROWDJH ,& Motor driver, MOS/IGBT gate driver - 6XUJH 6XSSUHVVRU 3RZHU 'LRGH - +LJK 9ROWDJH )DVW 5HFRYHU\ 'LRGH +LWDFKL ,*%7 0RGXOHV


    Original     		PDF 66HULHV DHM3FJ60 DHM3J120 DHM3C140 DHM3D160 DHM3FG80 DHM3FL80 82kHz DHM3HA80 DHM3HB120 circuit diagram of single phase water pump 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original     		PDF SR2-SP-09001 MDM800H45E2 MDM800E45E2

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-03002R8 MDM800E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage


    Original     		PDF SR2-SP-03002R8 MDM800E33D

    carrier wiring diagram

    Abstract: igbt wiring IGBT DRIVER SCHEMATIC IGBT parallel hitachi snubber capacitor igbt parallel diagram MBN800
    Text: April 1998 No.17 Hitachi Power Devices Technical Information PD Room This month we present you topics on connecting IGBT elements in parallel following up on the material last month. Last month, we discussed on the gate driver circuit used for driving elements in parallel and this month, we describe the main circuit wiring.


    Original     		PDF

    diode hitachi

    Abstract: LS190N 1000-1 POWER MODULE
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.


    Original     		PDF SR2-SP-10001 MDM800H45E2-H diode hitachi LS190N 1000-1 POWER MODULE

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12

    N2M400

    Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
    Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)


    Original     		PDF KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original     		PDF SR2-SP-10001 MDM800H45E2-H MDM800H45r

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original     		PDF SR2-SP-10001 MDM800H45E2-H