PMF400UN
Abstract: No abstract text available
Text: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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PMF400UN
M3D102
OT323
SC-70)
PMF400UN
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PMF370XN
Abstract: SOT323 FET N M 087
Text: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PMF370XN
M3D102
OT323
SC-70)
PMF370XN
SOT323 FET N
M 087
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES
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BFT92W
OT323
BFT92W
BFT92.
MBC870
SCD31
123065/1500/01/pp12
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
BFT92
m1b marking
marking code 10 sot23
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MRC002
Abstract: MRC005 MRC008 BFS540 MRC003 philips bfs540
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS540 PINNING • High power gain
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BFS540
OT323
MBC870
OT323
OT323.
MRC002
MRC005
MRC008
BFS540
MRC003
philips bfs540
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MRC026
Abstract: MRC025 MRC027 BFS520 mrc024 MRC021
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS520 • High transition frequency It is intended for wideband applications such as satellite TV
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BFS520
OT323
OT323
MBC870
R77/03/pp13
MRC026
MRC025
MRC027
BFS520
mrc024
MRC021
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1PS70SB82
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes
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M3D102
1PS70SB82;
1PS70SB84;
1PS70SB85;
1PS70SB86
1PS70SB82
1PS70SB82
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BFS540
Abstract: MRC005
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION
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M3D102
BFS540
OT323
MBC870
613516/04/pp12
BFS540
MRC005
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Untitled
Abstract: No abstract text available
Text: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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PMF280UN
M3D102
OT323
SC-70)
MBC870
771-PMF280UN115
PMF280UN
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The
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BFT92W
OT323
BFT92W
BFT92.
MBC870
OT323.
R77/01/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns
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BFS505
OT323
MBC870
OT323.
OT323
R77/03/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION • High power gain
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M3D102
BFS540
OT323
MBC870
R77/04/pp13
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Untitled
Abstract: No abstract text available
Text: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323.
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BSH121
BSH121
OT323.
OT323,
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BAS70
Abstract: BAS70-04W BAS70-05W BAS70-06W BAS70W
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BAS70W series Schottky barrier double diodes Product specification Supersedes data of 1996 Mar 19 1999 Mar 26 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70W series
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M3D102
BAS70W
BAS70
MLC358
BAS70-04W
SCA63
115002/00/03/pp8
BAS70
BAS70-05W
BAS70-06W
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marking code W1
Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,
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BFT92W
OT323
BFT92W
BFT92.
MBC870
OT323.
R77/01/pp14
marking code W1
BFT92
TRANSISTOR 3358
NH35
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SMD DIODE bas70
Abstract: MLC359 A2 DIODE SMD CODE MARKING smd transistor marking A2 BAS70 BAS70-04W BAS70-05W BAS70W MLC360
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAS70W series Schottky barrier double diodes Product specification Supersedes data of October 1994 File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier (double) diodes
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M3D102
BAS70W
BAS70
MLC358
BAS70-
SMD DIODE bas70
MLC359
A2 DIODE SMD CODE MARKING
smd transistor marking A2
BAS70
BAS70-04W
BAS70-05W
MLC360
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1PS70SB82
Abstract: 1PS70SB85 1PS70SB86 MLC359 1PS70SB84
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product specification 2001 Jan 18 Philips Semiconductors Product specification 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes
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M3D102
1PS70SB82;
1PS70SB84;
1PS70SB85;
1PS70SB86
1PS70SB82
1PS70SB82
1PS70SB85
1PS70SB86
MLC359
1PS70SB84
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BFR93AW
Abstract: BFR93A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor
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BFR93AW
OT323
BFR93AW
BFR93A.
BFR93A
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MBG240
Abstract: BFS17 BFS17W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS
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BFS17W
OT323
BFS17W
BFS17.
MBC870
MBG240
BFS17
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES BAS70W series PINNING • Low forward voltage BAS70 PIN • High breakdown voltage • Guard ring protected • Very small S M D package • Low capacitance. W -04W -05W
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BAS70W
BAS70
BAS70W)
BAS70-04W;
MBC870
OT323)
OT323
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic
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BFS17W
OT323
BFS17W
BFS17.
MBC870
711062b
711Dfl5b
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEA TUR ES D ES C R IPTIO N • High power gain Silicon NPN transistor encapsulated • Gold metallization ensures excellent reliability in a plastic SO T323 S-mini package.
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BFR93AW
BFR93A.
MBC870
711062b
7110flEb
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Schottky barrier double diodes BAT54W series PINNING FEATURES • Low forward voltage BAT54 PIN • Guard ring protected • Very small SMD package. APPLICATIONS W AW CW SW 1 a 2 n.c. ki k2 ai a2 ai k2 3 k i ►?)
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BAT54W
BAT54
BAT54AW
OT323
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Philips FA 564
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures
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BFT93W
OT323
BFT93W
BFT93.
MBC870
OT323.
711002b.
Philips FA 564
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BFR93AW
Abstract: MBG204 marking G SOT323 Transistor BFR93A
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.
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BFR93AW
OT323
BFR93AW
BFR93A.
711002b
711062b
MBG204
marking G SOT323 Transistor
BFR93A
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