Untitled
Abstract: No abstract text available
Text: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment.
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BC264A
tjtiS3T31
0D3S715
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BF247A
Abstract: No abstract text available
Text: _ s\ BF246A to C BF247A to C _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended for VHF and UHF amplifiers, mixers and general purpose switching.
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BF246A
BF247A
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BB530
Abstract: No abstract text available
Text: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.
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BF245A
BF245A/0
0023SD4
bhS3T31
7Z62701
hbS3T31
BB530
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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MBB114
Abstract: J110 PZFJ108 PZFJ109 PZFJ110
Text: • 7110fiEb OObflOMfl M m ■ PHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low RDS on at zero gate voltage (< 8 £2 for PZFJ108)
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7110fl2b
PZFJ108/PZFJ109/PZFJ110
PZFJ108)
-SOT223
OT223
MBB114
711GS2b
PZFJ109)
PZFJ110)
MBB114
J110
PZFJ108
PZFJ109
PZFJ110
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BFU309
Abstract: No abstract text available
Text: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections
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BFU308/309/310
MSB032
MBB114
PINNING-TO-18
00E3b
b53T31
BFU309
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PMBFJ111
Abstract: No abstract text available
Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23
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0024DS2
J111/P
J112/
FJ113
PMBFJ111)
PMBFJ112)
PMBFJ113)
DD24D55
PMBFJ111/PMBFJ112/PMBFJ113
PMBFJ111
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Untitled
Abstract: No abstract text available
Text: m b b s a ^ i □□E4D7ti 021 * a p x n amer p h i l i p s /d i s c r e t e Philips Semiconductors D a ta sh eet s tatu s Product specification d a te o f issue Ju ly 1 9 9 3 FEATURES • High speed switching • Interchangeability of drain and source connections
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PZFJ108)
OT223
PZFJ108/PZFJ109/PZFJ110
MBB114
PZFJ109)
PZFJ110)
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J110
Abstract: PZFJ108 PZFJ109 PZFJ110
Text: • ^53^31 □ 0 2 4 D 7 C1 DB1 m * P X N A PIER P H I L I P S / D I S C R E T E Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections
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PZFJ108/PZFJ109/PZFJ110
-SOT223
PZFJ108)
MBB114
OT223
PZFJ109)
PZFJ110)
00240A2
J110
PZFJ108
PZFJ109
PZFJ110
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