IC 630 ONLY WRITTEN APPLICATION 16 PIN
Abstract: quanta
Text: UT130-AP Associative Processor Advanced Product Information May1998 FEATURES q Compresses any length key data into information icons q Powerful sliding windows search engine Scalable to interface with any size memory - Uses memory efficiently - Performance unaffected by size
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UT130-AP
May1998
AP130-2-5-98
IC 630 ONLY WRITTEN APPLICATION 16 PIN
quanta
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COP888EG
Abstract: CRC16 M28B USBN9602 USBN9602-28M
Text: May1998 USBN9602 Universal Serial Bus Full Speed Function Controller With DMA Support 1.0 General Description The USBN9602 is an integrated USB Node controller compatible with the USB Specification Version 1.0. Integrated onto a single IC are the required USB transceiver with a
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May1998
USBN9602
USBN9602
multi0-180-530
COP888EG
CRC16
M28B
USBN9602-28M
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transistor C9012
Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 QuvyvÃTr vpqp
The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.
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GTV1000
AN98051
GTV1000
TDA884X
C9029
220uF
C6004
transistor C9012
transistor c9018
dc05 7 segments
TDA7075AQ
UV1315
tda8842 circuit diagram
transistor c9014
c9015 transistor
c9018 transistor
transistor C9015
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PSD4xx
Abstract: difference between 68hc12 and 80c196 CLDCC68 plcc 68 PLCC 68 intel ZPSD411A2-C-70J ST psd413a1-c-90ji microcontroller based automatic power factor control PSD403A1-C-90UI PSD411A2-C-70J
Text: PSD4XX ZPSD4XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD4XX – 2.7 to 5.5 V for PSD4XX-V Up to 1 Mbit of UV EPROM Up to 16 Kbit SRAM Input Latches
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PLDCC68
CLDCC68
TQFP68
PSD4xx
difference between 68hc12 and 80c196
CLDCC68
plcc 68
PLCC 68 intel
ZPSD411A2-C-70J
ST psd413a1-c-90ji
microcontroller based automatic power factor control
PSD403A1-C-90UI
PSD411A2-C-70J
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psd4xx
Abstract: TQFP68 PSD411A2-C-70J CLDCC68 psd403a2-c-90
Text: PSD4XX ZPSD4XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD4XX – 2.7 to 5.5 V for PSD4XX-V ■ Up to 1 Mbit of UV EPROM ■ Up to 16 Kbit SRAM
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PLDCC68
CLDCC68
TQFP68
psd4xx
TQFP68
PSD411A2-C-70J
CLDCC68
psd403a2-c-90
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76137S
Abstract: 76137P HUF76137P3 AN9321 AN9322 HUF76137S3S HUF76137S3ST TB334
Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76137P3,
HUF76137S3S
76137S
76137P
HUF76137P3
AN9321
AN9322
HUF76137S3S
HUF76137S3ST
TB334
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76137P
Abstract: 76137S TA7613 75E1 AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334
Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76137P3,
HUF76137S3S
76137P
76137S
TA7613
75E1
AN9321
AN9322
HUF76137P3
HUF76137S3S
HUF76137S3ST
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 37P UF76 7S3 bt A, V, 09 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
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HUF76137P3,
HUF76137S3S
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76137P
Abstract: 76137s
Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76137P3,
HUF76137S3S
76137P
76137s
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76137s
Abstract: M4E1
Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76137P3,
HUF76137S3S
O-263
HUF76137S3S
76137s
M4E1
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ZPSD301B-90JI
Abstract: STMicroelectronics date code format ZPSD302B-90JI PSD312-B-15J 80C18 PLD Programming Information ZPSD301V-B-25J
Text: PSD3XX ZPSD3XX ZPSD3XXV PSD3XXR ZPSD3XXR ZPSD3XXRV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD3xx, ZPSD3xx, PSD3xxR, ZPSD3xxR s t c u d o ) r s ( P t c e t
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PLDCC44
CLDCC44
PQFP44
TQFP44
ZPSD301B-90JI
STMicroelectronics date code format ZPSD302B-90JI
PSD312-B-15J
80C18
PLD Programming Information
ZPSD301V-B-25J
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PSD503B1-C-70J
Abstract: psd5xx PSD503B1 15A 9314
Text: PSD5XX ZPSD5XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD5XX – 2.7 to 5.5 V for PSD5XX-V ■ Up to 1 Mbit of UV EPROM ■ Up to 16 Kbit SRAM
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PLDCC68
CLDCC68
TQFP68
PSD503B1-C-70J
psd5xx
PSD503B1
15A 9314
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psd5xx
Abstract: 1994 datasheet MICROCONTROLLER 8031 80C196 assembly language counter driver cmos PSD503B1 TQFP68
Text: PSD5XX ZPSD5XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD5XX – 2.7 to 5.5 V for PSD5XX-V Up to 1 Mbit of UV EPROM Up to 16 Kbit SRAM Input Latches
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PLDCC68
CLDCC68
TQFP68
psd5xx
1994 datasheet MICROCONTROLLER 8031
80C196 assembly language
counter driver cmos
PSD503B1
TQFP68
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Marking STMicroelectronics
Abstract: No abstract text available
Text: STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD3NB50 500 V < 2.8 Ω 3A STD3NB50-1 500 V < 2.8 Ω 3A FEATURES SUMMARY • TYPICAL RDS(on) = 2.5 Ω
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STD3NB50
STD3NB50-1
STD3NB50-1
O-251
O-252
Marking STMicroelectronics
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PSD411A2-C-70J
Abstract: ZPSD411A2-C-70J psd4xx WSI zpsd ordering 100 20L A1 diode 403A1
Text: PSD4XX ZPSD4XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD4XX – 2.7 to 5.5 V for PSD4XX-V ■ Up to 1 Mbit of UV EPROM ■ Up to 16 Kbit SRAM
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PLDCC68
CLDCC68
TQFP68
PSD411A2-C-70J
ZPSD411A2-C-70J
psd4xx
WSI zpsd ordering
100 20L A1 diode
403A1
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d3nb5
Abstract: D3NB50 diode k 0368 marking c2 diode STD3NB50 STD3NB50-1 STD3NB50T4
Text: STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD3NB50 500 V < 2.8 Ω 3A STD3NB50-1 500 V < 2.8 Ω 3A FEATURES SUMMARY • TYPICAL RDS(on) = 2.5 Ω
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STD3NB50
STD3NB50-1
O-251
d3nb5
D3NB50
diode k 0368
marking c2 diode
STD3NB50
STD3NB50-1
STD3NB50T4
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psd3xx
Abstract: WSI PSD312-b PA510 PSD301 CS10 PQFP44 PSD301R PSD302R PSD311R TQFP44
Text: PSD3XX ZPSD3XX ZPSD3XXV PSD3XXR ZPSD3XXR ZPSD3XXRV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD3xx, ZPSD3xx, PSD3xxR, ZPSD3xxR – 2.7 to 5.5 V for ZPSD3xxV, ZPSD3xxRV
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PLDCC44
CLDCC44
PQFP44
TQFP44
psd3xx
WSI PSD312-b
PA510
PSD301
CS10
PQFP44
PSD301R
PSD302R
PSD311R
TQFP44
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Untitled
Abstract: No abstract text available
Text: ISSI IS61SF12836 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION MAY1998 FEATURES DESCRIPTION • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns The IS 6 1 S F 1 2 8 3 6 is a h ig h -s p e e d , lo w -p o w e r synchronous static RAM designed to provide a burstable,
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IS61SF12836
680X0â
F12836-8B
F12836-8
61SF12
61SF12836-1
61SF12836-8TQ
61SF12836-8
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80C51
Abstract: 80C52 IS89C51 AD685
Text: ISSI IS89C51 CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 4-Kbytes of FLASH PRELIMINARY MAY1998 FEATURES GENERAL DESCRIPTION • 80C51 based architecture The IS S IIS89C51 is a high-performance microcontroller fabricated using high-density CMOS technology. The
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IS89C51
80C51
128x8
16-bit
40-pin
44-pin
ISSIIS89C51
microcontroll067
80C52
IS89C51
AD685
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JJ7N
Abstract: No abstract text available
Text: IS61SF12836 v 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control
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IS61SF12836
100-Pin
119-pin
i486TM,
68TION
IS61SF12836-7
IS61SF12836-8TQ
IS61SF12836-8B
IS61SF12836-8
JJ7N
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XR88C192
Abstract: Crystal X9S SC26C92 SCC2692 XR88C92 XR88C92CJ XR88C92CP XR88C92CV XR88C92IJ XR88C92IP
Text: Preliminary Information EXAR XR88C92/192 DUAL UNIVERSAL ASYNCHRONOUS RECEIVER AND TRANSMITTER DESCRIPTION The XR88C92/192 is a Dual Universal Asynchronous Receiver and Transmitter with 8 XR88C92 / 16 (XR88C192) bytes transmit and receive FIFO. The XR88C92/192 is a pin and functional replacement for the
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XR88C92/192
XR88C92/XR88C192
XR88C92)
XR88C192)
XR88C92/192
SC26C92
SCC2692
May1998
XR88C192
Crystal X9S
XR88C92
XR88C92CJ
XR88C92CP
XR88C92CV
XR88C92IJ
XR88C92IP
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28F008SA
Abstract: E28F008SA LH28F008SAT
Text: a H/HITE /MICROELECTRONICS WPF29160-120G1XX 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) SIM M MODULE PRELIMINARY* FEATURES GENERAL DESCRIPTION • A c c e s s T im e of 1 2 0 n s T h e W h it e M ic r o e le c t r o n ic s W P F 2 9 1 6 0 -1 2 0 G 1 X X is a 4 x 1 M x 3 2
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WPF29160-120G1XX
16MBYTE
4x1Mx32)
120ns
WPF29041-120G1XI
E28F008SA
WPF29041-120G1XS
LH28F008SAT
WPF29160-120G1XX
80-pin
28F008SA
E28F008SA
LH28F008SAT
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L1711
Abstract: No abstract text available
Text: S i M IT E L SL2017 _ Full Band Satellite Tuner S E M IC O N D U C T O R r.Prelim i inary i t Inform ation D S 4 8 8 9 - 1.2 m a y 1998 The SL2017 is a fully integrated mixer with output AGC, intended primarily for application in satellite tuners, where it
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SL2017
SL2017
15GHz,
L1711
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N9321
Abstract: F7613 TA7613
Text: ? *3 2 £ HUF76137P3, HUF76137S3, HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 | Features Description w • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76137P3,
HUF76137S3,
HUF76137S3S
TB334,
O-263AB
N9321
F7613
TA7613
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