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    MARKING WB2 Search Results

    MARKING WB2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING WB2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5E4 T85

    Abstract: 5E4T85 T85 "Rocker Switches" marking 2P 125VAC-T85 marking wb2 20A marking
    Text: WB2 Series High Amperage Water Protection Heavy Duty Front Panel Mount FEATURES: SPECIFICATIONS: RATING: MAINTAINED SWITCHES: 20A 125VAC [cULus] 20A 250VAC [cULus] 2HP 125/250VAC [cULus] 22 14 A 250V~ 5E4 T85 [European] MOMENTARY SWITCHES: 20A 125VAC T85 [cULus]


    Original     		PDF 125VAC 250VAC 125/250VAC 125VAC 250VAC 500VDC 500VAC WB246D112S WB24ED1121 5E4 T85 5E4T85 T85 "Rocker Switches" marking 2P 125VAC-T85 marking wb2 20A marking

    T85 5e4 Switch

    Abstract: 5E4 T85
    Text: WB2-Series High Amperage Water Protection Heavy Duty Front Panel Mount The WB2-Series is a cutting edge water-resistant rocker switch. Utilizing innovative, flexible internal seals that do not affect the feel or action, this switch does NOT require a PVC cap to achieve


    Original     		PDF 125VAC 250VAC 125/250VAC WB242D1121: WB246D1100: T85 5e4 Switch 5E4 T85

    nitto SWT 10

    Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
    Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device


    Original     		PDF QSP0005 MAS1234AB3 MAS1234AB3xxxxx) 98AA2 MAS9198AA2xxxxx) nitto SWT 10 nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    MRF9030NR1

    Abstract: marking z17 100B470JP
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    WB201209

    Abstract: WB160808 WB160808B300 WB1005 WB160808B100 WB160808B221 WB160808B102 WB3216 WB201209F800QLT04 WB321611B310QLT60
    Text: Walsin Technology Corporation Lead Free Ferrite Beads Series Customer : Approval No : 013SZ-940145 Issue Date : 2005/05/18 Customer Approval : WALSIN Technology Corp. Authorized By : Chen-yuan Su Page 1 of 19 Lead Free Ferrite Beads version 04 March 2004 Walsin Technology Corporation


    Original     		PDF 013SZ-940145 WB201209 WB160808 WB160808B300 WB1005 WB160808B100 WB160808B221 WB160808B102 WB3216 WB201209F800QLT04 WB321611B310QLT60

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080LR3

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source


    Original     		PDF MRF9080LR3 MRF9080 marking WB1 sot-23 marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT

    Untitled

    Abstract: No abstract text available
    Text: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over copper.


    Original     		PDF WB1010-1, WB2010-1, WB3010-1 WB1015, WB3015 WB1040, WB2040, WB3040

    Untitled

    Abstract: No abstract text available
    Text: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over phos


    Original     		PDF WB1010-1, WB2010-1, WB3010-1 WB1015, WB3015 WB1040, WB2040, WB3040

    Untitled

    Abstract: No abstract text available
    Text: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over copper.


    Original     		PDF Packa005 WB1010-1, WB2010-1, WB3010-1 WB1015, WB3015 WB1040, WB2040, WB3040

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1

    Untitled

    Abstract: No abstract text available
    Text: Document 116-1 Wideband RF Transformers •฀ Surface mount and through hole versions •฀ 500 V interwinding isolation, 1/4 Watt RF input power •฀ 250 mA max current rating. •฀ For a smaller package size, see our TTWB Series Core material Ferrite


    Original     		PDF

    MRF9045N

    Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045

    MRF377HR3

    Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377HR3 MRF377HR5 NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi

    VIPer 32

    Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2

    marking WB1 sot-23

    Abstract: WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1

    Untitled

    Abstract: No abstract text available
    Text: c*L4RoHSC€ WB2 Series FEATURES: • High Ratings with UL and TUV Approvals • Industry Standard 22mm x 30mm Cutout • Internal Dust and Water Protection to IP55 R R ating: Maintained 20A, 125/250VAC T65/T85 [CURus] 2.0HP, 125/250VAC [oURus] 18 12 A, 250VAC 5E4 T85 [TUV]


    OCR Scan     		PDF 125/250VAC T65/T85 125/250VAC 250VAC 500MTJ 500VDC