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    MA2Z081 Search Results

    MA2Z081 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA2Z081 Panasonic Silicon Epitaxial Planar Type Band Switching Diode Original PDF
    MA2Z081 Panasonic Silicon epitaxial planar type Original PDF
    MA2Z081 Panasonic Diode Original PDF

    MA2Z081 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA2Z081

    Abstract: MA81
    Text: Band Switching Diodes MA2Z081 MA81 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient Storage temperature + 0.1 2.5 ± 0.2 Unit Reverse voltage (DC)


    Original
    PDF MA2Z081 MA2Z081 MA81

    MA2Z081

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2Z081 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating VR 35 V Forward current DC IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient Storage temperature + 0.1 2.5 ± 0.2 Unit Reverse voltage (DC)


    Original
    PDF MA2Z081 TDC-121A MA2Z081

    Untitled

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2Z081 MA81 Silicon epitaxial planar type Unit : mm 0.30+0.10 –0.05 For band switching 1 Operating ambient temperature* Storage temperature 0.9±0.1 Unit VR 35 V IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C 0.00±0.05 Forward current (DC)


    Original
    PDF MA2Z081

    Untitled

    Abstract: No abstract text available
    Text: Band Switching Diodes MA2Z081 MA81 Silicon epitaxial planar type Unit : mm 0.30+0.10 –0.05 For band switching Reverse voltage (DC) VR Forward current (DC) IF Operating ambient temperature* Storage temperature Topr Tstg 0.9±0.1 Rating Unit 35 V 100 mA


    Original
    PDF MA2Z081

    MA2Z081

    Abstract: MA81
    Text: Band Switching Diodes MA2Z081 MA81 Silicon epitaxial planar type Unit : mm 0.30+0.10 –0.05 For band switching 7° Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient temperature*


    Original
    PDF MA2Z081 MA2Z081 MA81

    MA2Z081

    Abstract: MA81
    Text: Band Switching Diodes MA2Z081 MA81 Silicon epitaxial planar type Unit : mm 0.30+0.10 –0.05 For band switching 1.25±0.10 Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient temperature*


    Original
    PDF MA2Z081 MA2Z081 MA81

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928