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    Abstract: No abstract text available
    Text: bSM^f l SS 0023501 O il • M IT I MITSUBISHILSIs M5M28F016FP,VP,RV-10,-12,-15 -, " <•A0- '■ to ° 16777216-BIT 2097152-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The Mitsubishi M 5M 28F016FP, V P , RV are high - speed 167 77 2 1 6 -bit CMOS Flash Memories suitable for solid state


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    PDF M5M28F016FP RV-10 16777216-BIT 2097152-WORD 28F016FP, M5M28F016FP, M5M28F016FP.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs c, M 5 M 2 8 F 0 1 6 F P ,V P ,R V -1 0 ,-1 2 ,-1 5 16777216-BIT 2097152-WORD BY8-BIT CMOS FLASH MEMORY DESCRIPTION The Mitsubishi M 5M 28F016FP, V P , RV are high-speed 16777216-bit CMOS Flash Memories suitable for solid state storage. The M5M28F016FP, VP, RV are fabricated by Nchannel double polysilicon gate for the memory cell and


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    PDF 16777216-BIT 2097152-WORD 28F016FP, M5M28F016FP, 097152-w M5M28F016FP 100ns M5M28F01