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    M377S0823ET3 Search Results

    M377S0823ET3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M377S0823ET3 Samsung Electronics 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet Original PDF
    M377S0823ET3-C1H Samsung Electronics 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Original PDF
    M377S0823ET3-C1L Samsung Electronics 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Original PDF

    M377S0823ET3 Datasheets Context Search

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    CDC2509

    Abstract: No abstract text available
    Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Rev. 0.1 Jan. 2001 PC100 Registered DIMM M377S0823ET3 M377S0823ET3 SDRAM DIMM (Intel 1.2 ver. Base)


    Original
    PDF M377S0823ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. M377S0823ET3 8Mx72

    CDC2509

    Abstract: samsung capacitance year code
    Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original
    PDF M377S0823ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance year code