bc856 to 92
Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
Text: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ
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BC546
BC846
O-236*
2N4036
8C556
T0-92
BC856
TN4036
bc856 to 92
bc846 to 92
2N2907A TO-92
2N3859A
PN3568
Marking 43B
NSDU05
2N3859A NATIONAL SEMICONDUCTOR
T0-237
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LB 124 transistor
Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor
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bSD1130
00372b0
T-33-21
2N6427
MMBT6427
MPQ6427*
to-236
sot-23)
TL/G/10100-7
TL/Q/10100-5
LB 124 transistor
LB 124 d
MPQ6427
transistor BC 236
16-SOIC
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TRANSISTOR C 557 B
Abstract: MMBT3640 PN3640 PN4258
Text: S e m i c o n d u c t o r ' “ PN3640 MMBT3640 PN3640 / MMBT3640 & Discrete POW ER & Signal Technologies National SOT-23 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. S e e
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PN3640
MMBT3640
OT-23
PN4258
VBE10fl,
00M0bS2
TRANSISTOR C 557 B
MMBT3640
PN3640
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FLC 100
Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Text: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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2N3906
MMPQ3906
MMBT3906
PZT3906
SOIC-16
OT-223
rO-92
b5D113D
0QMQb71
FLC 100
728p
cny 76
200U
2N3906
MMBT3906
MMPQ3906
PZT3906
SOIC-16
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PN4258
Abstract: process 65
Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*
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PN4258
MMBT4258
PN4258
D040b
process 65
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mmbt2906a
Abstract: MMBTL51 MMBT2904A
Text: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905
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O-236
mmbt2906a
MMBTL51
MMBT2904A
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MMPQ3467
Abstract: SOIC-16 TN3467A
Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .
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TN3467A
MMPQ3467
O-226
SOIC-16
S0113D
D04DbMfl
MMPQ3467
SOIC-16
TN3467A
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LSC 132
Abstract: 2N5401 MMBT5401 357t
Text: 2N5401 I MMBT5401 <S> D is c r e te P O W E R & S i g n a l T e c h n o lo g ie s _ National Semiconductor"' 2N5401 MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
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SQ1130
DD4D711
LSC 132
2N5401
MMBT5401
357t
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
bS01130
0040bc
Tf 227
MMBT2369A
MMPQ2369
PN2369A
SOIC-16
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NZT651
Abstract: No abstract text available
Text: NZT651 . Di scret e P O W E R & S ig n a l T echnologies National Se m i c o n d u c i o r NZT651 SOT-223 NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.
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NZT651
OT-223
bSD113D
D0406B0
bS01130
NZT651
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SOT-23 Mark ZF
Abstract: SOT-23 ZF 2N3906 2N4126 MMBT4126 zf 200
Text: S e m ico n d u cto r 2N4126 I MMBT4126 e? Discrete P O W ER & S ig n a l Technologies _ National MMBT4126 2N4126 SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 nA as a switch and to 100
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2N4126
MMBT4126
OT-23
2N3906
100nA,
Rs-10
L501130
SOT-23 Mark ZF
SOT-23 ZF
2N4126
MMBT4126
zf 200
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NZT6714
Abstract: TN6714A
Text: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
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NZT6714
OT-223
bS0113D
O-226
b501130
NZT6714
TN6714A
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MMBTA42
Abstract: MPSA42 PZTA42 MPSA42 NATIONAL
Text: MPSA42 I MMBTA421PZTA42 tß Discrete POWER & Signal Technologies National Semiconductor" PZTA42 MMBTA42 MPSA42 SOT-23 B SOT-223 M ark: 1D NPN High Voltage Am plifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced
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PZTA42
OT-223
00M07bfl
MMBTA42
MPSA42
PZTA42
MPSA42 NATIONAL
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MMBT2904
Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Text: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)
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T-29-OI
03714S
T-37-01
T-29-01
MMBT2904
MMBT2904A
MMBT3905
MMBT4916
MMBT3638A
MMBT3702
MMBT3703
MMBT4402
MMBT4403
MMBT5143
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25CC
Abstract: BCX71K
Text: u c t o r " BCX71K D isc re te POW ER & S ig n a l Techno logies BCX71K SOT-23 M a rk: B K PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68.
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BCX71K
bSD113D
25CC
BCX71K
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NPN RF Amplifier
Abstract: PN3563 PN918 798MHZ LS0113
Text: PN3563 Discrete P O W E R & S ig n a l Technologies National Semiconductor'“ PN3563 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
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PN3563
PN918
LS0113D
D04DL50
NPN RF Amplifier
PN3563
798MHZ
LS0113
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NPN RF Amplifier
Abstract: y-parameter MMBTH20 MPSH20 U407
Text: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A
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LSG113Ã
b501130
NPN RF Amplifier
y-parameter
MMBTH20
MPSH20
U407
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MMBT5133
Abstract: MMBT930
Text: This Surface Mount Devices NATL Material 533 National Semiconductor éZA Surface Mount Transistors SEMICOND Type No. VCEO V EBO V (V) (V) (nA)@ VCB Min Max Min Its 45 TO-236 (49) 60 TO-236 (49) 60 45 10 (Y) h fE Min 45 150 100 45 2 45 150 100 60 @ Max (mA)
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37lEt
T-29-01
MMBT5133
MMBT930
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PN544
Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300
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T-29-Of
T-29-01
PN544
TI59
national 2N3859
2N2712
2N915
MPQ2222
MPQ6700
T1890
TN2219
PN101
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ST3904
Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.
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BC338 hie hre hfe
Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
Text: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92
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b501130
bS01130
T-03-01
BC338 hie hre hfe
BD371C-10
bc368 hie
BD370B-10
BD371D
BD371C
BF936
BF494
BF495
b055
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ksd113
Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100
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bS01130
D0B70fll
NSD206
O-202
NSDU56
NSDU57
ksd113
NSD6181
2N4355
2N4354
2N6726
2N6727
MPSA92
151a100
MPSW92
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2N4355
Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Text: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D
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50113G
003SMM3
30fiA,
2N4355
2N5139
2N3644
2N4121
TN2904A
NS4234
TIS91
2N3638A
2N4354 T-12
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BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
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b50113D
L5D1130
T-03-01
BD371C-10
BD371D
BF494
BF936
yc 236
b055
BC338-25 NATIONAL SEMICONDUCTOR
BD371B
BD371C
BD371C-6
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