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    diode sg 94

    Abstract: GC522 diode sg 64
    Text: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result o f testing initial devices. Distinguishing Features Applications • Tracks 3 V/ns Inputs with ±100 ps


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