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    L2SD2114KWLT1G Search Results

    L2SD2114KWLT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L2SD2114KWLT1G Leshan Radio Company Epitaxial planar type NPN silicon transistor Original PDF

    L2SD2114KWLT1G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)


    Original     		L2SD2114KVLT1G 500mA 236AB) OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.)


    Original     		L2SD2114KVLT1G 2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23 PDF

    L2SD2114KVLT1G

    Abstract: L2SD2114KWLT1G
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)


    Original     		L2SD2114KVLT1G 500mA 236AB) OT-23 L2SD2114KWLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1G zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.


    Original     		L2SD2114K 500mA 236AB) OT-23 PDF

    L2SD2114KVLT1

    Abstract: L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1 zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 3


    Original     		L2SD2114K 500mA 236AB) OT-23 L2SD2114KVLT1 L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.)


    Original     		L2SD2114KVLT1G S-L2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23 PDF

    copper wire

    Abstract: LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G
    Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 090401 PCN Issue Date: 28th Apr' 2009 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SOT23 Packages Contact your local LRC Sales


    Original     		L2SC2411KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SC3906KALT1G L2SD1781KRLT1G L2SD2114KVLT1G L2SD2114KWLT1G L9012QALT1G L9012QLT1G copper wire LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G PDF