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    KSC1009 Search Results

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    KSC1009 Price and Stock

    onsemi KSC1009GTA

    TRANS NPN 140V 0.7A TO92-3
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    DigiKey KSC1009GTA Ammo Pack 2,000
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    onsemi KSC1009GBU

    TRANS NPN 140V 0.7A TO92-3
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    DigiKey KSC1009GBU Bulk 10,000
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    onsemi KSC1009YTA

    TRANS NPN 140V 0.7A TO-92
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    Verical KSC1009YTA 16,000 10,870
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    KSC1009YTA 16,000 10,870
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    Rochester Electronics KSC1009YTA 32,000 1
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    Flip Electronics KSC1009YTA 13,894
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    Flip Electronics KSC1009YTA

    NPN EPITAXIAL SILICON TRANSISTOR
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    DigiKey KSC1009YTA Bulk 13,894
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    onsemi KSC1009CYTA

    TRANS NPN 140V 0.7A TO92-3
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    DigiKey KSC1009CYTA Ammo Pack 2,000
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    KSC1009 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSC1009 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSC1009 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSC1009 Samsung Electronics NPN (HIGH VOLTAGE AMPLIFIER) Scan PDF
    KSC1009CG Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009CO Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009CR Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009CY Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009CYBU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009CYTA Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009G Fairchild Semiconductor High Voltage Amplifier Original PDF
    KSC1009G Samsung Electronics TRANS GP BJT NPN 140V 0.7A 3TO-92 Scan PDF
    KSC1009GBU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009GTA Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009O Fairchild Semiconductor High Voltage Amplifier Original PDF
    KSC1009O Samsung Electronics TRANS GP BJT NPN 140V 0.7A 3TO-92 Scan PDF
    KSC1009OBU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009OTA Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSC1009R Fairchild Semiconductor High Voltage Amplifier Original PDF

    KSC1009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp Transistor TO92 5V 200mA

    Abstract: KSA709
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF KSA709 -160V 800mW KSC1009 KSA709RBU KSA709CYBU KSA709YBU KSA709RTA KSA709YTA pnp Transistor TO92 5V 200mA KSA709

    transistor c1009

    Abstract: c1009 c1009 transistor KSA709 KSC1009
    Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base


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    PDF KSC1009 700mA 800mW KSA709 KSC1009 KSC1009CYBU KSC1009CYTA KSC1009GBU KSC1009GTA transistor c1009 c1009 c1009 transistor

    KSA709

    Abstract: No abstract text available
    Text: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • High Collector-Base Voltage: VCBO=160V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW • Complement to KSA709 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic


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    PDF KSC1009 700mA 800mW KSA709

    KSA709

    Abstract: No abstract text available
    Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base


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    PDF KSC1009 700mA 800mW KSA709 KSC1009CYBU KSC1009OBU KSC1009YTA KSC1009CYTA KSC1009OTA

    KSA709

    Abstract: No abstract text available
    Text: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage: VCBO= -160V • Collector Dissipation: PC=800mW • Complement to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG


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    PDF KSA709 -160V 800mW KSC1009 KSA709

    KSA709

    Abstract: KSC1009
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


    Original
    PDF KSA709 -160V 800mW KSC1009 KSA709 KSC1009

    KSA709

    Abstract: KSC1009
    Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base


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    PDF KSC1009 700mA 800mW KSA709 15ner KSA709 KSC1009

    A709 transistor

    Abstract: a709 fairchild a709 KSA709CGBU KSA709
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF KSA709 -160V 800mW KSC1009 KSA709 KSA709CGBU KSA709CGTA KSA709COBU KSA709COTA A709 transistor a709 fairchild a709

    KSA709

    Abstract: KSC1009
    Text: KSC1009 KSC1009 High Voltage Amplifier • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Dissipation : PC=800mW Complement to KSA709 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF KSC1009 700mA 800mW KSA709 KSA709 KSC1009

    KSA709

    Abstract: KSC1009
    Text: KSA709 KSA709 High Voltage Amplifier • Collector-Base Voltage : VCBO= -160V • Collector Dissipation : PC=800mW • Complement to KSC1009 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF KSA709 -160V 800mW KSC1009 KSA709 KSC1009

    KSA709

    Abstract: KSC1009
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF KSA709 -160V 800mW KSC1009 KSA709 KSC1009

    2SC9830

    Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)


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    PDF 205AO 92var 220AB 220AB A220AB OT-89 O-92var OT-89 O-92var 2SC9830 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    Untitled

    Abstract: No abstract text available
    Text: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • • • • TO -92 High C ollector-Base Voltage: V Cb o = 1 6 0 V C ollector Current: lc=700m A C ollector Dissipation: Pc=800m W C om plem ent to KSA709 ABSOLUTE MAXIMUM RATINGS TA=25°C


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    PDF KSC1009 KSA709

    KSA709

    Abstract: KSC1009
    Text: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O | 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709


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    PDF KSC1009 700inA 800mW KSA709 T-29-23 KSA709

    Untitled

    Abstract: No abstract text available
    Text: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • High Collector-Base Voltage V Cao=160V • Collector Current lc=700mA • Collector Dissipation P c*800m W • Com plem ent to KSA709 ABSOLUTE MAXIMUM RATINGS T a = 2 5 'C C h aracte ristic


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    PDF KSC1009 700mA KSA709 200mA,

    Untitled

    Abstract: No abstract text available
    Text: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vcao=160V Collector Current lc = 700mA Collector Dissipation Pc=800mW Complement to KSA709 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol


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    PDF KSC1009 700mA 800mW KSA709 7Sb4142 002M72? 0G2472Ã

    KSA709

    Abstract: KSC1009
    Text: SAMSUNG SEMICONDUCTOR INC T v M - v 2 3 l 4 E KSA709 O | OOGbflOE O PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • C o lle cto r-B a s e Voltage Vcso = -160V • C o lle cto r D issip a tio n P c =800mW • C o m p le m en t to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    PDF KSA709 -160V 800mW KSC1009 -100/iA, KSC1009

    KSA709

    Abstract: KSC1009
    Text: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage V CBo = -160V • Collector Dissipation Pc =800m W • Complement to KSC1009 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage


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    PDF KSA709 -160V 800mW KSC1009 -100pA, -10mA, -0J05 7Tb4142 0Q24b51 KSA709 KSC1009

    Untitled

    Abstract: No abstract text available
    Text: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage V c b o = -160V • C ollector Dissipation Pc“ 800m W • Com plem ent to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25'C Sym b o l C h aracte ristic Collector-Base Voltage


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    PDF KSA709 -160V KSC1009

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


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    PDF OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10

    KSC2880

    Abstract: KSA1200
    Text: FUNCTION GUIDE TRANSISTORS 1-4. High Voltage Transistors 1-4-1. SOT-23'Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1 E) PNP lc (A) VCE (V) lc (mA) MIN 300 200 150 140 0.5 0.5 0.5 0.6 10 10 5 5 30 30 10 10 40 40 60 60 KST92(2D) KST93(2E)


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    PDF OT-23 KST42 KST43 KST555CK1F) KST92 KST93 KST5401 O-92S KSC2340 KSC2330 KSC2880 KSA1200

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


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    PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v