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    KMM5362000

    Abstract: No abstract text available
    Text: KMM5362000B1/B1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5362000B1 consist of sixteen CMOS 1 Mx 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M x 1


    OCR Scan     		PDF KMM5362000B1/B1G KMM5362000B1-6 KMM5362000B1-7 KMM5362000B1-8 110ns 130ns 150ns KMM5362000B1 20-pin KMM5362000

    Untitled

    Abstract: No abstract text available
    Text: SAMSUN6 ELECTRONICS INC b4E D • 7^4142 KMM5362000B1/B1G 0G14b47 G67 ■ SflGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000B1/B1G 0G14b47 KMM5362000B1 20-pin 72-pin 22/xF KMM5362000B1-6 110ns

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10