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    KMM53216004B Search Results

    KMM53216004B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM53216004BK-5 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53216004BK-6 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53216004BKG-5 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53216004BKG-6 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF

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    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original
    PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs


    Original
    PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this moudule.


    Original
    PDF KMM53216004BV/BVG KMM53216004BV/BVG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 16Mx4

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


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    PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits

    LTRW

    Abstract: No abstract text available
    Text: KMM53216004BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216004BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan
    PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits KMM53216004BK LTRW