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    KMM53216000B Search Results

    KMM53216000B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM53216000BK-5 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53216000BK-6 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53216000BKG-5 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF
    KMM53216000BKG-6 Samsung Electronics 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216000BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53216000BV/BVG KMM53216000BV/BVG 16Mx4, KMM53216000B 16Mx32bits 16Mx4bits 72-pin

    KMM53216000BK

    Abstract: KMM53216000BKG
    Text: DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (May 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53216000BK/BKG KMM53216000BK/BKG 16Mx4, KMM53216000B 16Mx32bits 16Mx4bits 72-pin KMM53216000BK KMM53216000BKG

    KMM53216000BK

    Abstract: KMM53216000BKG
    Text: DRAM MODULE KMM53216000BK/BKG KMM53216000BK/BKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53216000BK/BKG KMM53216000BK/BKG 16Mx4, KMM53216000B 16Mx32bits 16Mx4bits 72-pin KMM53216000BK KMM53216000BKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216000BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216000BK/BKG 16Mx32SIMM 16Mx4 KMM53216000BK/BKG 16Mx4, KMM53216000B 16Mx32bits KMM53216000BK

    Untitled

    Abstract: No abstract text available
    Text: KMM53216000BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216000BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216000BK/BKG 16Mx32SIMM 16Mx4 KMM53216000BK/BKG 16Mx4, KMM53216000B 16Mx32bits KMM53216000BK