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    KMM366S1623BT Search Results

    KMM366S1623BT Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM366S1623BT Samsung Electronics PC100 SDRAM MODULE Scan PDF
    KMM366S1623BT-G8 Samsung Electronics PC100 SDRAM module. 125 MHz, 8 ns speed Scan PDF
    KMM366S1623BT-GH Samsung Electronics PC100 SDRAM module. 100 MHz, 10 ns speed Scan PDF
    KMM366S1623BT-GL Samsung Electronics PC100 SDRAM module. 100 MHz, 10 ns speed Scan PDF
    KMM366S1623BTL Samsung Electronics PC66 SDRAM Module Scan PDF
    KMM366S1623BTL-G0 Samsung Electronics PC100 SDRAM MODULE Scan PDF
    KMM366S1623BTL-G0 Samsung Electronics S Scan PDF
    KMM366S1623BTL-GO Samsung Electronics S Scan PDF

    KMM366S1623BT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM48S8030BT-G10

    Abstract: KM48S803 KMM366S1623BTL KMM366S1623BTL-G0
    Text: KMM366S1623BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S1623BTL 200mV. 66MHz KM48S8030BT-G10 KM48S803 KMM366S1623BTL KMM366S1623BTL-G0

    KM48S8030BT-G8

    Abstract: KMM366S1623BT-GL MV 42H KMM366S1623BT KMM366S1623BT-G8 KMM366S1623BT-GH KM48S8030BT-G
    Text: KMM366S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.


    Original     		PDF KMM366S1623BT PC100 100MHz 100MHz KM48S8030BT-G8 KMM366S1623BT-GL MV 42H KMM366S1623BT KMM366S1623BT-G8 KMM366S1623BT-GH KM48S8030BT-G

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V


    OCR Scan     		PDF KMM366S1623BT PC100 KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		PDF KMM366S1623BT PC100 KMM366S162top 150Max KM48S8030BT

    KMM366S1623BT-GL

    Abstract: No abstract text available
    Text: KMM366S1623BT PC100 SDRAM MODULE KMM366S1623BT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S1623BT KMM366S1623BT PC100 16Mx64 400mil 168-pin KMM366S1623BT-GL

    km48s8030bt

    Abstract: KMM366S1623BTL KMM366S1623BTL-G0
    Text: PC66 SDRAM MODULE KMM366S1623BTL Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.


    OCR Scan     		PDF KMM366S1623BTL 200mV. KMM366S1623Brite KM48S8030BT km48s8030bt KMM366S1623BTL KMM366S1623BTL-G0

    KMM366S1623BT

    Abstract: KMM366S1623BT-G8 KMM366S1623BT-GH KMM366S1623BT-GL
    Text: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. llL(lnputs) : ± 5uA to ± 1 u A , I il (DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V d d = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		PDF KMM366S1623BT PC100 KM48S8030BT KMM366S1623BT KMM366S1623BT-G8 KMM366S1623BT-GH KMM366S1623BT-GL

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1623BTL PC66 SDRAM MODULE KMM366S1623BTL SDRAM DiMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BTL is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S1623BTL KMM366S1623BTL 16Mx64 40Qmil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Intel 1.0 SDRAM MODULE KMM366S1623BTL_ Revision History Revision .l N ovem ber 1997 This spec has changed in accordance with New Binning [s F ' ELECTRO ftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S1623BTL


    OCR Scan     		PDF KMM366S1623BTL_ KMM366S1623BTL KMM366S1623BTL 366S1623BTL 1623BTL 400mil 168-pin 150Max 48S8030BT

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT