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    KM681000A Price and Stock

    Samsung Semiconductor KM681000ALP-10

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    Bristol Electronics KM681000ALP-10 55
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    Quest Components KM681000ALP-10 7
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    SEC KM681000ALG-7L

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    Bristol Electronics KM681000ALG-7L 23
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    Samsung Semiconductor KM681000ALP-7L

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    Samsung Semiconductor KM681000ALG-7

    STANDARD SRAM, 128KX8, 70NS, CMOS, PDSO32
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    Quest Components KM681000ALG-7 277
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    KM681000ALG-7 35
    • 1 $11.475
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    KM681000ALG-7 2
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    Samsung Semiconductor KM681000ALT-8L

    128K X 8 STANDARD SRAM, 85 NS, PDSO32
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    Quest Components KM681000ALT-8L 199
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    KM681000A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM681000ALGI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000AL-V Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    KM681000A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.


    OCR Scan     		PDF KM681000ALPI/ALGI 128Kx8 550/jW 275/iW 110mW KM681000ALPI/ALPI-L: 32-Pin KM681000ALGI/ALGI-L: KM68100QALPI/ALGI

    KM681000AL-L

    Abstract: KM681000ALT
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM681000AL/KM681OOOAL-L 120ns 81000A KM681OOOALG/ALG-L: KM681000ALT/ALT-L KM681OOOALR/ALR-L: KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L KM681000AL-L KM681000ALT

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC b4E D • 7 * ^ 4 1 4 2 0 0 1 4 0 2 4 OT4 ■ SMGK KM681000ALV CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2 . 7 - 5.5V • Fast Access Time 3V Operation: 240ns Max.


    OCR Scan     		PDF KM681000ALV 240ns 120ns iW/35mW KM681000ALP-V: 32-pin 600mil) KM681000ALG-V: 525mil)

    cs1g

    Abstract: No abstract text available
    Text: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072


    OCR Scan     		PDF KM681000ALI/ALI-L 100ns 110mW KM681000ALPI/ALPI-L: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mil) 681000ALI/ALI-L cs1g

    Untitled

    Abstract: No abstract text available
    Text: KM681000AL/KM681000AL-L CMOS SRAM 128KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im * 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) L-Version 5|iW (typ.) LL-Version Operating : 35mW (typ.) • Single S V ±10 % Power Supply


    OCR Scan     		PDF KM681000AL/KM681000AL-L 128KX8 KMG81000ALP/ALP-L: 600mil) KM681000ALG/ALG-L: 525mil) KM681000ALT/ALT-L KM681000ALR/ALR-L: 000AUAL-L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM681000AL-V CMOS SRAM 1 2 8 K x 8 Bit Static R A M W ide Voltage Range Operation FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7-5.5V • Fast Access Time — 3V Operation: 240ns (Max.) — 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating


    OCR Scan     		PDF KM681000AL-V 240ns 120ns 0ftW/35mW KM681000ALP-V: 32-pln KM681000ALGV: 32-pin KM681OOOALT/R-V:

    km681000alt

    Abstract: No abstract text available
    Text: SAMSUNG EL EC T R O N I C S INC b7E D • 7^4145 KM681000AL/KM681000AL-L QÜ17SDS 70T « S r i G K CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/jW (typ.) L-Version


    OCR Scan     		PDF KM681000AL/KM681000AL-L 17SDS 120ns 81000A KM681000ALT/ALT-L 0017S10 ib414B 0D17511 km681000alt

    km681000Alp

    Abstract: KM681000A
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10|iW (typ.) L-Version 5(jW (typ.) LL-Version Operating : 35mW (typ.) • Single 5 V ± 10% Power Supply


    OCR Scan     		PDF KM681000AL/KM681OOOAL-L KM681000ALP/ALP-L: 600mil) KM681 525mil) KM681OOOALT/ALT-L KM681000ALR/ALR-L KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L km681000Alp KM681000A

    KM681000ALT

    Abstract: km681000Alp 681000
    Text: KM681000AL/KM681000AL-L CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5^W (typ.) LL-Version Operating : 35m W (typ.) • Single 5 V ± 10% Power Supply


    OCR Scan     		PDF KM681000AL/KM681000AL-L KM681000ALP/ALP-L 681000ALG/ALG-L: KM681000ALT/ALT-L 681000ALR KM681OOOAL/AL-L M000AL/KM681000AL-L 0820F) KM681000ALT km681000Alp 681000

    KM681000AL-V

    Abstract: KM681000ALP-V KM681000ALT KM68100al
    Text: KM681000AL-V CMOS SRAM 131.072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 - 5.5V • Fast Access Time 3V Operation: 240ns Max. 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating 3V Operation: 2.4iiW/1.2mW (Typ.)


    OCR Scan     		PDF KM681000AL-V 240ns 120ns 0/iW/35mW KM681000ALP-V: 32-pin 600mil) KM681000ALG-V: 525mil) KM681000AL-V KM681000ALP-V KM681000ALT KM68100al

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    TC551001a

    Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
    Text: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##


    OCR Scan     		PDF HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 HY62256A MB84256A TC551001a CXK584000 Fujitsu FLL 100 cxk58527 uPD434000 M5M51008 SRM20256

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


    OCR Scan     		PDF KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681OOOALPI/ALGI 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C • Fast Access Time: 70,100 ns (Max.) • Low Power Dissipation Standby (C M O S ): 550/xW (Max.) LAfer.


    OCR Scan     		PDF KM681OOOALPI/ALGI 128Kx8 550/xW 110mW KM681000ALPI/ALPI-L: 32-Pin KM681000ALGI/ALGI-L: KM681000ALPI/ALGI 576-bit

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    KMG81000-12L

    Abstract: C4122 KM681000-10L lh511000 M5M51008a M628128 TR10L KM681000-7L M5M51008A-55L Hitachi Scans-001
    Text: - 1481M CMOS X M £ tt * OC TAAC •ax ns) TCAC max (n s ) 'f TOE nax (n s ) «y TOH a in (ns) S t a t i c + TOD (ns) y / TWP tin (n s ) R A M (1 3 1 , 0 7 2 x 8 ) TDS min (ns) 3 2 PIN M tt TDH min (ns) TWD ■ in (n s ) TWR fiax (n s ) V D D or V C C (V)


    OCR Scan     		PDF HI628128LT/R-10L HM628128LT/R-12L HM6Z8128LT/R-7L 5-55M51008A-10L M5M51008A-12L M5M51008A-55LL M5M51008A-70LL M5M51008A-85LL M5M51008A-10LL M5M51008A-12LL KMG81000-12L C4122 KM681000-10L lh511000 M5M51008a M628128 TR10L KM681000-7L M5M51008A-55L Hitachi Scans-001

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    csi-2

    Abstract: 256X8
    Text: KM681OOOALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 8 5 ° C • Fast Access Tim e: 70,100 ns (Max.) • Low Power D issipation Standby (CMOS) : 550MW (M ax.) L-\fer.


    OCR Scan     		PDF KM681OOOALPI/ALGI 128Kx8 -40to85Â 550MW 275/iW 110mW KM681000ALPI/ALPI-L: 32-Pin KM681000ALGI/ALGI-L: csi-2 256X8

    KM416C256-7

    Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
    Text: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7----- KM41C4000ASL-8-- KM41C4000ASL-10 KM41C4001A-7 KM416C256-7 KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L

    132SA

    Abstract: km681000a
    Text: SAMSUNG ELECTRONICS INC b4E D • 7'ìt.mMS 0 0 1 4 G 1 5 Ü61 ■ SMGK KM681OOOALI/ALI-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 40 to 85°C • Fast Access Time: 70, 100ns Max. • Low Power Dissipation


    OCR Scan     		PDF KM681OOOALI/ALI-L 100ns 275/iW 110mW KM681OOOALPI/ALPIL: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mii) 132SA km681000a

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble