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    Samsung Semiconductor KM616BV4002J-12

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    Samsung Semiconductor KM616BV4002J-15

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    sec KM616BV4002J12

    256K X 16 BIT HIGH-SPEED BICMOS STATIC RAM(3.3V OPERATING) Standard SRAM, 256KX16, 12ns, BICMOS, PDSO44
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    ComSIT USA KM616BV4002J12 86
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    KM616BV4002J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616BV4002J-12 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF
    KM616BV4002J-15 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF
    KM616BV4002J-20 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF

    KM616BV4002J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA KM616BV4002 16-bits. 44-SO]

    KO10

    Abstract: No abstract text available
    Text: Advanced Information KM616BV4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby fTTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA 44-SOJ-4 KM616BV4002 16-bits. KO10

    KM616BV4002

    Abstract: KM616BV4002J KM616BV4002J-12 KM616BV4002J-15 KM616BV4002J-20
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM616BV4002J-12 : 240m A (M ax.)


    OCR Scan     		PDF KM616BV4002 256Kx KM616BV4002J-12 240mA KM616BV4002J-15 KM616BV4002J-20 I/O9-4/O16 KM616BV4002J 44-SOJ-400 KM616BV4002 KM616BV4002J KM616BV4002J-12 KM616BV4002J-15 KM616BV4002J-20

    KM616BV4002J-15

    Abstract: KM616BV4002 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175m A(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA I/09-I/016 44-SOJ-400 KM616BV4002 KM616BV4002J-15 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)


    OCR Scan     		PDF KM616BV4002 616BV4002J-12 KM616BV4002J-15 4002J-20: KM616BV4002J 44-SOJ-400 KM616BV4002 304-bit 0031fc

    A13j

    Abstract: 3b711 KM616BV4002 KM616BV4002J
    Text: KM616BV4002 CMOS SRAM 256K x16B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002-12:240mA(Max.)


    OCR Scan     		PDF KM616BV4002 256Kx 16Bit KM616BV4002-12 240mA KM616BV4002 KM616BV4002J 36-SOJ-400 512x18 A13j 3b711 KM616BV4002J

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BICMOS SRAM 256K X 16 Bit High-Speed BiCMOS Static RAM 3.3v Operating FEATURES G E N E R A L D E S C R IP T IO N •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max) Operating KM616BV4002 -1 2 : 240mA(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002 240mA 235mA 230mA 1/01-l/Os, KM616BV4002J 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002 -1 2 :2 4 0 mA(Max.)


    OCR Scan     		PDF KM616BV4002 16Bit KM616BV4002 KM616BV4002J: 36-SQJ-400 304-bit September-1996

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM616BV4002 256Kx16 10/12/15ns 12/15/20ns