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    TURCK Inc RKM 61-6M

    Cmn |Turck RKM 61-6M
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    TURCK Inc WKM 61-6M

    Cmn |Turck WKM 61-6M
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    TURCK Inc RYM RKM 61-6M

    Cmn |Turck RYM RKM 61-6M
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    TURCK Inc RSM RKM 61-6M

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    TURCK Inc RKM 61-6M/S739

    Cmn |Turck RKM 61-6M/S739
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    KM616 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6161000BLR-5L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLR-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLRI-10L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLRI-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLT-5L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLT-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLTI-10L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLTI-7L Samsung Electronics 64K x16 bit Low Power CMOS Static RAM Original PDF
    KM6161000BLTI-7LT Samsung Electronics IC SRAM CHIP ASYNC SINGLE 5V 1MBIT 64KX16 70NS 44TSOP-II Original PDF
    KM6161002A Samsung Electronics CMOS SRAM Scan PDF
    KM6161002A-12 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002A-15 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002A-20 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6161002AI Samsung Electronics 64K x 16 Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI-12 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI-15 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AI-20 Samsung Electronics 64K x 16-Bit Speed Static RAM (5V Operating) Revolutionary Pin Out Scan PDF
    KM6161002AIJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6161002AIJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    ...

    KM616 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM616FS4010 Family CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 1.0 Finalize - DC characteristics change ICC1 : 3mA → 4mA


    Original     		PDF KM616FS4010 48-CSP 25/Typ. 45/Typ. 68/Typ.

    vdr10

    Abstract: KM616FV2000A KM616FV2000ATI-10
    Text: KM616FV2000A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft for design target. November 18, 1998 Advance 0.1 Resive December 1, 1998


    Original     		PDF KM616FV2000A vdr10 KM616FV2000ATI-10

    Untitled

    Abstract: No abstract text available
    Text: KM616FV2010A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 23, 1998 Preliminary 1.0 Finalize - Change VDR=1.0 to 1.5V - Change IDR test condition ; VCC=1.2 to 1.5V


    Original     		PDF KM616FV2010A 25/Typ. 68/Typ. 45/Typ.

    Untitled

    Abstract: No abstract text available
    Text: KM616FS2010A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft June 25, 1998 1.0 Finalize - IDR test condition change: Vcc=1.5V to Vcc=1.2V


    Original     		PDF KM616FS2010A 48-CSP 25/Typ. 45/Typ. 68/Typ.

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM616B4002 uses 16 com mon input and output lines and has an output enable pin w hich operates


    OCR Scan     		PDF KM616B4002 KM616B4002-12 KM616B4002-13 KM616B4002-15 KM616B4002J 44-SQJ-400 KM616B4002 304-bit i/o9-I/o16

    km6161000bl7

    Abstract: No abstract text available
    Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7

    Lb 598 d

    Abstract: KM616V4002A 71L414E
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.


    OCR Scan     		PDF 616V4002A 256Kx KM616V4002A- KM616V4002A-17 KM616V4002A I/O16 KM616V4002AJ 44-SOJ-400 I/O9-I/O18 March-1997 Lb 598 d 71L414E

    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


    OCR Scan     		PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    KM616BV4002

    Abstract: KM616BV4002J
    Text: KM616BV4002 BiCMOS SRAM 256K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operatina FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 3,15 ns(M ax.) • Low Pow er Dissipation Standby (TT L) : 6 0 m A(M ax.) <C M O S):30 m A(M ax.) Operating K M 61 6 B V 4 0 0 2 -1 2 : 2 4 0 m A(M ax.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002-12 KM616BV4002-13 KM616BV4002-15: I/09-I/016 KM616BV4002J 44-SOJ-400 KM616BV4002 304-bit KM616BV4002J

    TT1102

    Abstract: 100PF
    Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536


    OCR Scan     		PDF KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF

    ic tba 220

    Abstract: km6161002j KM6161002-17
    Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		PDF KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17

    Scans-0012741

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 KM616V4002BI/BLI 44-SOJ-400 44-TSO P2-400F Scans-0012741

    Untitled

    Abstract: No abstract text available
    Text: KM616FR4010 Family Advance CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise Speed bin change : 70/100ns —> 85/100ns


    OCR Scan     		PDF KM616FR4010 70/100ns 85/100ns 48-CSP

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002B, KM6161002BI 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B - 8 : 200 mA(Max.)


    OCR Scan     		PDF KM6161002B, KM6161002BI KM6161002B KM6161002BJ 44-SOJ-400 KM6161002BT 44-TSOP2-4QOF

    Z812

    Abstract: No abstract text available
    Text: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)


    OCR Scan     		PDF KM6164002/L KM6164002-20 250mA KM6164002-25 240mA KM6164002-35 220mA KM684002J/U 44-SOJ-400 Z812

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 Q017b32 32fi I SHGK PRELIMINARY KM616V513 CMOS SRAM 32,768 W O RD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 17, 20, 25n s (M ax.) • Low Pow er D issipation


    OCR Scan     		PDF Q017b32 KM616V513 GG17b40 400mil)

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616U4010C Family CMOS SRAM Document Tills 256Kx16 bit Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package Revision History Revision No. 0.0 0.01 History Draft Date Remark Initial draft - UB/LB power control Errata correction


    OCR Scan     		PDF KM616U4010C 256Kx16 48-CSP 256Kx16n

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 D e sig n T a rg e t


    OCR Scan     		PDF KM616B4002 256Kx16 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.)


    OCR Scan     		PDF KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-17 161002A KM6161002AJ 44-SOJ-400 KM6161002AT 44-TSOP2-400F KM6161002A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)


    OCR Scan     		PDF 7Tb414e KM616513 DG17bE4 KM616513 288-bit 400mil)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F