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    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E I • 7 T b 4 1 4 2 D D l b l G 3 025 H S M G K KM41C16101 CMOS DRAM 1 6 M x 1 Bit CM OS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16101 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C16101 KM41C16101 110ns KM41C16101-7 130ns KM41C16101-8 150ns KM41C16101-6

    Untitled

    Abstract: No abstract text available
    Text: KM41C16101 CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 41C 16101 16,777,216 K M 41C 16101-6 • • • • • • • • • • is a C M O S h ig h s p ee d b it x 1 D y n a m ic R andom A c c e s s M e m o ry . Its


    OCR Scan     		PDF KM41C16101 KM41C16101 24-LEAD

    41C16100

    Abstract: 24-PIN 41C16000
    Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS


    OCR Scan     		PDF KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR 416C157ALZ KM416C157ALT KM416C157ALTR KM416C157ALLZ 41C16100 24-PIN 41C16000