Untitled
Abstract: No abstract text available
Text: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6
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KM416C1OOOA/A-L/A-F
KM416C1000A/A-L/A-F
KM416C1
DQ1-DQ16
42-LEAD
44-LEAD
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KMM5322000AW
Abstract: No abstract text available
Text: DRAM MODULE_ 8 Mega Byte KMM5322000AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322000AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322000AW consists of four CMOS
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KMM5322000AW/AWG
2Mx32
1Mx16
KMM5322000AW
42-pin
72-pin
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KM416C1000AJ
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5321OOOAW/AWG Fast Page Mode 1Mx32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321000AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000AW consists of two CMOS
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OCR Scan
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KMM5321OOOAW/AWG
1Mx32
1Mx16
KMM5321000AW
42-pin
72-pin
KMM5321000AW-6
KM416C1000AJ
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C1OOOA/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC KM416C1000A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1OOOA-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns
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OCR Scan
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KM416C1OOOA/A-L/A-F
KM416C1000A-6/A-L6/A-F6
110ns
KM416C1OOOA-7/A-L7/A-F7
130ns
KM416C1000A-8/A-L8/A-F8
150ns
cycle/64ms
cycle/128ms
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