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    Vishay Semiconductors VS-180RKI80PBF

    SCR 800V 285A TO209AB
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    DigiKey VS-180RKI80PBF Bulk 10 1
    • 1 $55.69
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    IXYS Corporation MKI80-06T6K

    IGBT MODULE 600V 89A 210W E1
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    DigiKey MKI80-06T6K Box 10
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    Mouser Electronics MKI80-06T6K
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    New Advantage Corporation MKI80-06T6K 597 1
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    Vishay Semiconductors VS-181RKI80

    SCR 800V 285A TO209AB
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    DigiKey VS-181RKI80 Bulk 12
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    Vishay Semiconductors VS-180RKI80

    SCR 800V 285A TO209AB
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    DigiKey VS-180RKI80 Bulk 12
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    • 100 $54.84667
    • 1000 $54.84667
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    Vishay Semiconductors VS-110RKI80

    SCR 800V 172A TO209AC
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    DigiKey VS-110RKI80 Bulk 25
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    KI80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.


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    PDF C4159 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA

    Untitled

    Abstract: No abstract text available
    Text: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de­ vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream­ plifier into a metal case. Simply by connecting to a DC power supply,


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    PDF P3357-02) P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA

    G5832

    Abstract: No abstract text available
    Text: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­


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    PDF KIRD80039EA P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA G5832

    Untitled

    Abstract: No abstract text available
    Text: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.


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    PDF P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA P2750,

    2T931A

    Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
    Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K


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    PDF MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A

    P4488

    Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
    Text: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these


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    PDF P4488 P3514 KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, G5832-05 G5832-11 KI80 pbse B1920-01 a7050

    G5832-01

    Abstract: G5832
    Text: InGaAs PIN Photodiodes Standard Types, Short-wavelength Enhanced Types, etc, High-performance NIR (Near Infrared) detectors with low noise • A wide line-up of device types are available: L a rg e a re a ty p es, sh o rt-w a v e len g th e n h an c e d ty p e s, etc.


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    PDF P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA 000M7D3 G5832-01 G5832

    Infrared photodiode preamplifier

    Abstract: No abstract text available
    Text: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.


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    PDF P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA 000M7D3 Infrared photodiode preamplifier

    GIGABYTE G41

    Abstract: 82360SL intel 82360SL
    Text: INTEL CORP UP/PRPHLS 3IE D 402tl7S 00aSbb7 2 int@l 7 = V f-/7 -^ 2 386TM SL MICROPROCESSOR SuperSet Highly-Integrated Static 386 Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static 386™ CPU Core — Runs MS-DOS*, WINDOWS*, O S/2*


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    PDF 402tl7S 00aSbb7 386TM 386TM 10-2c. 82360SL 196-Leadâ Ebl75 0125x0 GIGABYTE G41 intel 82360SL

    thermistor inas

    Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
    Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.


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    PDF KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, K3413-01, P3981-01, thermistor inas INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159

    pr 8501 b

    Abstract: P394A P3226-02 P3226 PBS P394 series
    Text: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame


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    PDF KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, K3413-01, P3981-01, pr 8501 b P394A P3226-02 P3226 PBS P394 series

    lvds+20+pin+to+30+pin

    Abstract: No abstract text available
    Text: MCT HgCdTe Photoconductive Detectors ( Thermoelectric cooling assures stable operation over extended time periods t e -c o o m Types) :C 111 • Choice of spectral response The band gap of HgCdTe can be modified by controlling the compo­ sition ratio of HgTe and CdTe. Utilizing this fact, various types are


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    PDF P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA C4159, lvds+20+pin+to+30+pin

    transistor C4159

    Abstract: No abstract text available
    Text: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a


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    PDF G6891, G6893 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, transistor C4159

    Untitled

    Abstract: No abstract text available
    Text: MEETbDT OGGHböb T HS Spectral Response 0.19 to 5 [im Type No. Outline No. P.36 Detector Element Active Area (mm) Shunt Resistance or Dark Resistance (MQ) Peak Photo Element Sensitivity Sensitivity Tempera­ Wavelength S ture Xp X.=?ip (-C ) (nm) (AW ) NEP


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    PDF K3413-03 4x101 3x10s 1x101 P3226-02 P394A, P3207-04 P791-11 P4115