019N20F
Abstract: KHB019N20F1 11LOT 019n20
Text: SEMICONDUCTOR KHB019N20F1 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 1 2 No. Item 515 3 Marking Description KHB KHB 019N20F 019N20F Revision 1 1 Lot No. 515 Device Name 2006. 2. 6 KHB 019N20F Revision No : 0 5 Year
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KHB019N20F1
O-220IS
019N20F
019N20F
KHB019N20F1
11LOT
019n20
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KHB019N20F1
Abstract: KHB019N20F2 KHB019N20P1
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1/F2
KHB019N20P1
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Fig16.
Fig17.
KHB019N20F1
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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KF5N50
Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41
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OT-23
FLP-14
KTC3003
1N4007
DO-41
MJE13003
MJE13005
O-126
KF5N50
kf12n60
IC 1N4007
diode 400V 4A
TO220IS
1N4007 diode bridge
MB6S
DF06 IC
kf13n50
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KHB019N20P1
Abstract: KHB019N20F1
Text: KHB019N20P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB019N20P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1
KHB019N20P1
KHB019N20P1
KHB019N20F1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KHB019N20F2
Abstract: KHB019N20F1 KHB019N20P
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
KHB019N20F2
KHB019N20F1
KHB019N20P
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1
KHB019N20P1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
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