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KDV214A Abstract: C25V Text: SEMICONDUCTOR KDV214A TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.57Ω Max. 1 E ・High Capacitance Ratio : C2V/C25V=6.3(Min.)	Original	PDF	KDV214A C2V/C25V 470MHz KDV214A C25V
KDV214A Abstract: No abstract text available Text: SEMICONDUCTOR KDV214A MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking UZ 0 1 2 1 No. Item Marking Description Device Mark UZ KDV214A hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	PDF	KDV214A KDV214A
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KDV214A TECHNICAL DATA TV TUNING. FEATURES 2008. 9. 11 Revision No : 1 1/2	Original	PDF	KDV214A
Untitled Abstract: No abstract text available Text: SEM ICONDUCTOR KDV214A TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. y FEATURES • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.	OCR Scan	PDF	C2V/C25V KDV214A 470MHz