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Toshiba America Electronic Components TK8A65D(STA4,Q,M) MOSFET N-CH 650V 8A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK8A65D(STA4,Q,M)	Bulk	38		1	1 $3.03 10 $3.03 100 $3.03 1000 $1.02141 10000 $0.9675	Buy Now
Mouser Electronics	TK8A65D(STA4,Q,M)		22			1 $2.74 10 $2.32 100 $1.28 1000 $0.967 10000 $0.967	Buy Now
Chip1Stop	TK8A65D(STA4,Q,M)	Bulk	35			1 - 10 $1.67 100 $1.67 1000 $1.67 10000 $1.67	Buy Now
Toshiba America Electronic Components TK8A65D(STA4 Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A65D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK8A65D(STA4	Tube		32 Weeks	50	1 - 10 - 100 $1.15326 1000 $1.0449 10000 $1.0449	Buy Now
Win Source Electronics	TK8A65D(STA4		74,000			1 - 10 - 100 $0.888 1000 $0.592 10000 $0.592	Buy Now
Toshiba America Electronic Components TK8A65D(STA4,X,M) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip1Stop	TK8A65D(STA4,X,M)	Tube	45			1 - 10 $0.81 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
EBV Elektronik	TK8A65D(STA4,X,M)		50	19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K8A65D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K8A65D Abstract: TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode Text: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	PDF	TK8A65D K8A65D TK8A65D transistor K8A65D k8a65 650VVGS VDD400 Device marking code 1m diode
Untitled Abstract: No abstract text available Text: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	PDF	TK8A65D
k8a65d Abstract: k8a65 TK8A65D Text: K8A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K8A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	PDF	TK8A65D SC-67 2-10U1B k8a65d k8a65 TK8A65D
transistor K8A65D Abstract: k8a65 K8A65D Text: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	PDF	TK8A65D transistor K8A65D k8a65 K8A65D
K8A65D Abstract: transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS Text: K8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	PDF	TK8A65D K8A65D transistor K8A65D TK8A65D k8a65 transistor 625 10-RDS
K8A65D Abstract: k8a65 TK8A65D Text: K8A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K8A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	PDF	TK8A65D SC-67 2-10U1B K8A65D k8a65 TK8A65D