BA99
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8A6415ET
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
BA99
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PDF
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T5371
Abstract: K8A6415EBB
Text: Application Note June. ‘05 Rising & Falling Time of Output Pin with 90nm Technology Product June , 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.
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415ETB,
K8A6415EBB)
128Mb/64Mb
K8A2815ETB,
K8A2815EBB,
K8A6415ETB,
T5371
K8A6415EBB
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SAMSUNG MCP
Abstract: MCP Samsung CM1453-04CP CMD
Text: Application Note for OTP Program June, 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology
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K8A5615ETA,
K8A5615EBA,
K8A2815ETB,
K8A2815EBB,
K8A6415ETB,
K8A6415EBB
SAMSUNG MCP
MCP Samsung
CM1453-04CP CMD
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samsung nor flash
Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Text: NOR FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8A6415ET
couldre17.
54MHz
A0-A21
00000FH
00001FH
00002FH
000000H
samsung nor flash
BA102
BA127 Diode
BA134
samsung nor
K8A6415EBB
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PDF
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