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    Samsung Semiconductor K7R321884M-FC20

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    K7R321884M Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K7R321884M Samsung Electronics 1Mx36 & 2Mx18 & 4Mx8 QDR II b4 SRAM Data Sheet Original PDF
    K7R321884M Samsung Electronics 1Mx36 & 2Mx18 QDRTM II b4 SRAM Original PDF
    K7R321884M-FC16 Samsung Electronics 1Mx36 & 2Mx18 QDRTM II b4 SRAM Original PDF
    K7R321884M-FC20 Samsung Electronics 1Mx36 & 2Mx18 QDRTM II b4 SRAM Original PDF
    K7R321884M-FC25 Samsung Electronics 1Mx36 & 2Mx18 QDRTM II b4 SRAM Original PDF

    K7R321884M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K7R321884M-FC25

    Abstract: K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25
    Text: K7R323684M K7R321884M 1Mx36 & 2Mx18 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit QDR TM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm


    Original     		PDF K7R323684M K7R321884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit 13mmx15mm 15mmx17mm -FC25 K7R321884M-FC25 K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25

    K7R320884M

    Abstract: K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25
    Text: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


    Original     		PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm -FC25 K7R320884M K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25

    Untitled

    Abstract: No abstract text available
    Text: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


    Original     		PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm

    K7R320884M

    Abstract: K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25 Q34D
    Text: K7R323684M K7R321884M K7R320884M 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


    Original     		PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm -FC25 K7R320884M K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25 Q34D

    Untitled

    Abstract: No abstract text available
    Text: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


    Original     		PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm

    IR 10D 8A

    Abstract: No abstract text available
    Text: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


    Original     		PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm IR 10D 8A

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Xilinx spartan xc3s400_ft256

    Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
    Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


    Original     		PDF UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    CY7C1313AV18-250BZC

    Abstract: EP1S60 EP2S60F1020C5ES F1020 v32-88
    Text: Interfacing QDRII+ & QDRII with Stratix II, Stratix II GX, Stratix, & Stratix GX Devices Application Note 326 May 2008, ver. 5.1 Introduction Synchronous static RAM SRAM architectures support the high throughput requirements of communications, networking, and digital


    Original     		PDF