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    Samsung Electronics Co. Ltd K7M403625B-QC75

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    K7M403625 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K7M403625B Samsung Electronics 128Kx36 & 128Kx32 & 256K x 18-Bit Flow-Through NtRAM Data Sheet Original PDF
    K7M403625B K7M403225B K7M401825B Samsung Electronics 128Kx36 & 128Kx32 & 256K x 18-Bit Flow-Through NtRAM Data Sheet Original PDF

    K7M403625 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K7M401825B

    Abstract: K7M403225B K7M403625B
    Text: K7M403225B K7M403625B Preliminary K7M401825B 128Kx36 & 128Kx32 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary


    Original
    PDF K7M403225B K7M403625B K7M401825B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 300mA K7M403225B K7M403625B

    Untitled

    Abstract: No abstract text available
    Text: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    Original
    PDF K7M403625M K7M401825M 128Kx36 256Kx18 256Kx18-Bit 1999E

    K7M401825B

    Abstract: K7M403225B K7M403625B
    Text: K7M403625B K7M403225B K7M401825B 128Kx36/x32 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original
    PDF K7M403625B K7M403225B K7M401825B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 300mA 250mA K7M401825B K7M403225B K7M403625B

    k7m403625a

    Abstract: No abstract text available
    Text: K7M403625A K7M401825A 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 20. 2000 Preliminary 0.1 1. Changed DC condition at Icc and ISB.


    Original
    PDF K7M403625A K7M401825A 128Kx36 256Kx18 256Kx18-Bit 320mA 370mA 300mA 350mA k7m403625a

    Untitled

    Abstract: No abstract text available
    Text: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    Original
    PDF K7M403625M K7M401825M 128Kx36 256Kx18 256Kx18-Bit

    Untitled

    Abstract: No abstract text available
    Text: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original
    PDF K7N403609B K7N403209B K7N401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 470mA 400mA

    Untitled

    Abstract: No abstract text available
    Text: K7N403601B K7N403201B K7N401801B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original
    PDF K7N403601B K7N403201B K7N401801B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original
    PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    K7N401801B

    Abstract: K7N403201B K7N403601B K7M403625
    Text: K7N403601B K7N403201B K7N401801B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary


    Original
    PDF K7N403601B K7N403201B K7N401801B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 350mA K7N401801B K7N403201B K7N403601B K7M403625

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original
    PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original
    PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


    Original
    PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620

    K7M403625B-QC

    Abstract: K7N401809B K7N403209B K7N403609B
    Text: K7N403209B K7N403609B K7N401809B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary


    Original
    PDF K7N403209B K7N403609B K7N401809B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 470mA K7M403625B-QC K7N401809B K7N403209B K7N403609B