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    K4M56163 Price and Stock

    Samsung Semiconductor K4M561633G-RN75

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K4M561633G-RN75 1,042
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    Samsung Semiconductor K4M56163LG

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    Bristol Electronics K4M56163LG 320
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    Samsung Semiconductor K4M561633G-BN750JR

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    Bristol Electronics K4M561633G-BN750JR 250
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    Samsung Electronics Co. Ltd K4M56163PI-BG75

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K4M56163PI-BG75 250 1
    • 1 $9
    • 10 $6.75
    • 100 $5.4
    • 1000 $5.175
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    Samsung Semiconductor K4M56163PE-RG

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    Bristol Electronics K4M56163PE-RG 20
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    K4M56163 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4M561633G Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RBF1H Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RBF1L Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RBF75 Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RBG Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RBL Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RBN Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RF1H Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RF1L Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RF75 Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RG Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RL Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M561633G-RN Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163LG Samsung Electronics 2M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163PE-BF1L Samsung Electronics 4M x 16 Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163PE-F1L Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163PE-F90 Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163PE-R Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163PE-RG Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M56163PG Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF

    K4M56163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4M56163PG

    Abstract: 54-FBGA
    Text: K4M56163PG - R B E/G/C/F Mobile SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M56163PG 16Bit 54FBGA 54-FBGA

    K4M56163PE-R

    Abstract: No abstract text available
    Text: K4M56163PE - R B G/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely


    Original     		PDF K4M56163PE 16Bit 54FBGA K4M56163PE-R

    K4M56163

    Abstract: No abstract text available
    Text: K4M56163PE - R B G/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely


    Original     		PDF K4M56163PE 16Bit 54CSP K4M56163

    K4M56163LG

    Abstract: 54bA
    Text: K4M56163LG - R B N/G/L/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M56163LG 16Bit 54FBGA 54bA

    K4M561633G

    Abstract: No abstract text available
    Text: K4M561633G - R B N/G/L/F Mobile SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		PDF K4M561633G 16Bit 54FBGA

    Untitled

    Abstract: No abstract text available
    Text: K4M56163DG - R B N/G/L/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/1.8V The K4M56163DG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M56163DG 16Bit 54FBGA

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: LPC3180 Development Kit NXP LPC3180 Embedded Linux Development Kit The LPC3180 Development Kit provides a stable platform for building powerful user applications with the NXP Semiconductors LPC3180 within the ARM9 Linux environment. The kit provides the user with an


    Original     		PDF LPC3180 LPC3180 11b/g STw5095) PCF50606 PCF50685) 128x160 DVC40406

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    samsung lcd JTAG

    Abstract: BGB203 KEYPAD PHONE LCD 128x160 128x160 DVC40406 samsung bluetooth PCF50606 LCD Module samsung mobile phones PCF50685
    Text: LPC3180 Development Kit NXP LPC3180 Embedded Linux Development Kit The LPC3180 Development Kit provides a stable platform for building powerful user applications with the NXP Semiconductors LPC3180 within the ARM9 Linux environment. The kit provides the user with an


    Original     		PDF LPC3180 LPC3180 11b/g STw5095) PCF50606 PCF50685) 128x160 DVC40406 samsung lcd JTAG BGB203 KEYPAD PHONE LCD 128x160 DVC40406 samsung bluetooth PCF50606 LCD Module samsung mobile phones PCF50685

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K4M56163

    Abstract: mt48lc16m16 tsop54 A04L sdram pcb layout 16Mb SDRAM ADSP-BF537 ADSP-BF561 EE-126 MT48LC32M16A2 SA10
    Text: Engineer-to-Engineer Note a EE-326 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or email [email protected] or [email protected] for technical support.


    Original     		PDF EE-326 0-13-084408-X ADSP-BF53x/ADSP-BF56x EE-326) K4M56163 mt48lc16m16 tsop54 A04L sdram pcb layout 16Mb SDRAM ADSP-BF537 ADSP-BF561 EE-126 MT48LC32M16A2 SA10

    K4M56163PI

    Abstract: DDR266 DDR333 60FBGA SDRAM16MX16
    Text: K4X56163PI - L F E/G Mobile DDR SDRAM 16Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)


    Original     		PDF K4X56163PI 16Mx16 K4M56163PI DDR266 DDR333 60FBGA SDRAM16MX16

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand