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Toshiba America Electronic Components TK3A65DA(STA4,QM) MOSFET N-CH 650V 2.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK3A65DA(STA4,QM)	Tube			1	1 $1.65 10 $1.65 100 $1.65 1000 $0.55 10000 $0.55	Buy Now
Mouser Electronics	TK3A65DA(STA4,QM)					1 $1.65 10 $1.65 100 $0.716 1000 $0.578 10000 $0.575	Get Quote
Rochester Electronics	TK3A65DA(STA4,QM)		10,000		1	1 $0.4469 10 $0.4469 100 $0.4201 1000 $0.3799 10000 $0.3799	Buy Now
Toshiba America Electronic Components TK3A65DA(STA4 Trans MOSFET N-CH 650V 2.5A 3-Pin(3+Tab) TO-220NIS - Rail/Tube (Alt: TK3A65DA(STA4,QM))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK3A65DA(STA4	Tube		32 Weeks	50	1 - 10 - 100 $0.6556 1000 $0.594 10000 $0.594	Buy Now

K3A65DA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TK3A65DA Abstract: No abstract text available Text: K3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K3A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	PDF	TK3A65DA TK3A65DA
K3A65d Abstract: K3A65DA K3A65 TK3A65DA 804TC Text: K3A65DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K3A65DA スイッチングレギュレータ用単位: mm 2.7 ± 0.2 10 ± 0.3 A : \|Yfs\| = 2.2 S (標準) (VDS = 650 V) 取り扱いが簡単なエンハンスメントタイプです。	Original	PDF	TK3A65DA K3A65d K3A65DA K3A65 TK3A65DA 804TC
K3A65DA Abstract: K3A65d TK3A65DA k3a65 650VVGS Text: K3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K3A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.3 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	PDF	TK3A65DA K3A65DA K3A65d TK3A65DA k3a65 650VVGS
k3a65 Abstract: No abstract text available Text: K3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K3A65DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.3 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	PDF	TK3A65DA k3a65