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    K20A60U Price and Stock

    Toshiba America Electronic Components TK20A60U(Q,M)

    MOSFET N-CH 600V 20A TO220SIS
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    Toshiba America Electronic Components TK20A60U(STA4,X,M)

    TK20A60U - TRANSISTOR (SILICON)
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    Rochester Electronics TK20A60U(STA4,X,M) 1
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    Toshiba America Electronic Components TK20A60U(STA4,X,S)

    TK20A60U - TRANSISTOR (SILICON)
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    Rochester Electronics TK20A60U(STA4,X,S) 68,800 1
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    Toshiba America Electronic Components TK20A60UQ

    SILICON N CHANNEL MOS TYPE (DTMOS II) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK20A60UQ 50
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    Toshiba America Electronic Components TK20A60U(Q)

    Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220SIS (Alt: TK20A60U(Q))
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    EBV Elektronik TK20A60U(Q) 26 Weeks 50
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    K20A60U Datasheets Context Search

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    K20A60U

    Abstract: TK20A60U VDD400 k20a
    Text: K20A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ K20A60U ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original
    TK20A60U SC-67 2-10U1B K20A60U TK20A60U VDD400 k20a PDF

    K20A60U

    Abstract: K20A60 TK20A60U TK-20A TK20A60
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U K20A60 TK20A60U TK-20A TK20A60 PDF

    K20A60U

    Abstract: TK20A60U k20a
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U TK20A60U k20a PDF

    K20A60U

    Abstract: k20a60 tk20a60u
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U k20a60 tk20a60u PDF

    k20a60u

    Abstract: TK20A60U 2-10U1B 200909
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U k20a60u TK20A60U 2-10U1B 200909 PDF

    Untitled

    Abstract: No abstract text available
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U PDF

    k20a60u

    Abstract: DTMF TONE GENERATOR TK20A60U
    Text: K20A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ K20A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original
    TK20A60U SC-67 2-10U1B 20070701-JA k20a60u DTMF TONE GENERATOR TK20A60U PDF

    k20a60

    Abstract: No abstract text available
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U k20a60 PDF

    K20A60U

    Abstract: K20A60 TK20A60U 0001 TRANSISTOR 100TC
    Text: K20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U K20A60 TK20A60U 0001 TRANSISTOR 100TC PDF