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    K20A60T

    Abstract: k20a60 TK20A60T TK20A60
    Text: K20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original     		PDF TK20A60T K20A60T k20a60 TK20A60T TK20A60

    k20a60t

    Abstract: tk20a60t
    Text: K20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original     		PDF TK20A60T k20a60t tk20a60t

    K20A60T

    Abstract: TK20A60T VDD400
    Text: K20A60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS K20A60T ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original     		PDF TK20A60T SC-67 2-10U1B 20070701-JA K20A60T TK20A60T VDD400