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Toshiba America Electronic Components TK10A55D(STA4,Q,M) MOSFET N-CH 550V 10A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK10A55D(STA4,Q,M)	Tube			1	1 $2.94 10 $2.94 100 $2.94 1000 $0.98633 10000 $0.92875	Buy Now
Mouser Electronics	TK10A55D(STA4,Q,M)					1 $2.66 10 $2.48 100 $1.21 1000 $0.928 10000 $0.928	Get Quote
Toshiba America Electronic Components TK10A55D(STA4 Trans MOSFET N-CH 550V 10A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK10A55D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK10A55D(STA4	Tube		32 Weeks	50	1 - 10 - 100 $1.10707 1000 $1.00305 10000 $1.00305	Buy Now

K10A55D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK10A55D
K10A5 Abstract: K10A55D Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK10A55D K10A5 K10A55D
Untitled Abstract: No abstract text available Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK10A55D
Untitled Abstract: No abstract text available Text: K10A55D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K10A55D スイッチングレギュレータ用単位: mm : RDS (ON) = 0.56 Ω (標準) : \|Yfs\| = 6.0 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2	Original	PDF	TK10A55D
Untitled Abstract: No abstract text available Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	PDF	TK10A55D