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    PD424256

    Abstract: ud41464 uPD41256-12
    Text: N E C ELECTRONICS INC 3GE D • t.427525 OOSSltQ 2 ■ NEC MEMORY PRODUCTS Dynamic R A M s Maximum Power Dissipation |mW Accesi Time ns) Cycle Time (ns) Supply Voltage Standby Active Package (Note 1) Pins /JPD41256-10 //PD41256-12 256K x 1 (page) NMOS 100


    OCR Scan     		PDF uPD41256-10 uPD41256-12 uD41464-10 uPD41464-12 uPD421000-70 uP0421000-80 uPD421000-10 uPD421000-12 uPD42100 256Kx4 PD424256 ud41464

    Untitled

    Abstract: No abstract text available
    Text: SEC jUfPD424258 262,144 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations The fiPD424258 is a static-column dynamic RAM orga­ nized as 262,144 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide


    OCR Scan     		PDF jUfPD424258 fiPD424258 63YL-7137B juPD424258 JHPD424258 itPD424258 JUPD424258 pPD424258

    uPD424258

    Abstract: No abstract text available
    Text: NEC JIPD424258 262,144 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iP D 424 258 is a static-colum n d ynam ic RAM orga­ 20-Pin Plastic DIP nized as 262,144 words by 4 bits and designed to op erate from a single + 5 -v o lt power supply. Advanced polycide


    OCR Scan     		PDF uPD424258 83YL-7I37B pPD424258 JJPD424258 JIPD424258 fiPD424258 JHPD424258 J1PD424258