Q67040-A4222-A2
Abstract: No abstract text available
Text: BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 306D 1200V 23A Pin 3 C E Package Ordering Code
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O-218
Q67040-A4222-A2
Jul-30-1996
Q67040-A4222-A2
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A4200
Abstract: bup304 BUP 200 Q67078-A4200-A2
Text: BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 304 1000V 35A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2 Maximum Ratings
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O-218
Q67078-A4200-A2
Jul-30-1996
A4200
bup304
BUP 200
Q67078-A4200-A2
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MC9S12XHY128
Abstract: MC9S12XHY256 0M23Y 9S12XHY256 9s12hy64 dps 161 psu MC9S12XHY LCD40F4BV2 bosch can 2.0A S12XHY256
Text: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 0.12
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MC9S12XHY256
MC9S12XHY
MC9S12XHY256RMV1
MC9S12XHY128
MC9S12XHY256
0M23Y
9S12XHY256
9s12hy64
dps 161 psu
LCD40F4BV2
bosch can 2.0A
S12XHY256
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BUP 300
Abstract: bup300
Text: BUP 300 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 300 1200V 3.6A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4203-A2 Maximum Ratings
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PDF
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O-218
Q67078-A4203-A2
Jul-30-1996
BUP 300
bup300
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Untitled
Abstract: No abstract text available
Text: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.01
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MC9S12XHY256
MC9S12XHY
MC9S12XHY256RMV1
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Untitled
Abstract: No abstract text available
Text: BUP 314 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 314 1200V 52A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4206 Maximum Ratings
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O-218
Q67040-A4206
Jul-30-1996
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Q67040-A4222-A2
Abstract: No abstract text available
Text: BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 306D 1200V 23A Pin 3 C E Package Ordering Code
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Original
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PDF
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O-218
Q67040-A4222-A2
Jul-30-1996
Q67040-A4222-A2
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bup 313
Abstract: Q67040-A4208-A2 bup313
Text: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 313 1200V 32A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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O-218
Q67040-A4208-A2
Jul-30-1996
bup 313
Q67040-A4208-A2
bup313
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bup314d
Abstract: BUP 314D
Text: BUP 314D Infineon IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VCE IC BUP 314D 1200V 42A Pin 3 C E Package
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O-218
Q67040-A4226
Jul-30-1996
bup314d
BUP 314D
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SOT-343
Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF998
Q62702-F1586
OT-343
Jul-30-1996
SOT-343
G1 TRANSISTOR
TRANSISTOR mosfet BF998
SOT 343 MARKING BF
mosfet tetrode
Marking G2
transistor marking code G1
BF998 marking code
1D TRANSISTOR
bf998 mosfet tetrode application note
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BUP 314
Abstract: Q67040-A4206-A2
Text: BUP 314 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 314 1200V 52A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4206-A2 Maximum Ratings
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O-218
Q67040-A4206-A2
Jul-30-1996
BUP 314
Q67040-A4206-A2
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bup 302
Abstract: bup 400
Text: BUP 302 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 302 1000V 12A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4205-A2 Maximum Ratings
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O-218
Q67078-A4205-A2
Jul-30-1996
bup 302
bup 400
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BUP 303 IGBT
Abstract: BUP 200
Text: BUP 303 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 303 1000V 23A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4202-A2 Maximum Ratings
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O-218
Q67078-A4202-A2
Jul-30-1996
BUP 303 IGBT
BUP 200
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BFR93AW
Abstract: marking code R2S 34
Text: BFR93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW
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BFR93AW
VSO05561
OT323
BFR93AW
marking code R2S 34
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MC9S12XHY256
Abstract: MC9S12XHY128 d768 transistor bosch can 2.0A S12XHY128 0M23Y MC9S12XHY256RMV1 IFR 740 transistor MOS generator cr 665 bosch ADC12B12CV1
Text: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.01
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MC9S12XHY256
MC9S12XHY
MC9S12XHY256RMV1
MC9S12XHY128
d768 transistor
bosch can 2.0A
S12XHY128
0M23Y
IFR 740 transistor MOS
generator cr 665 bosch
ADC12B12CV1
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BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Text: BAV99 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99
VPS05161
EHA07005
EHB00076
EHB00077
Jul-30-2001
EHB00078
BAV99
free pdf transistor a7s
bav99 marking
diode bav
A2 SOT23
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S12XHY
Abstract: MC9S12XHY256RMV1 MC9S12XHY128 9s12hy
Text: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.04
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MC9S12XHY256
MC9S12XHY
MC9S12XHY256RMV1
S12XHY
MC9S12XHY256RMV1
MC9S12XHY128
9s12hy
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BBY 10
Abstract: VES05991
Text: BBY 58-02W Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 • For low frequency control elements VES05991
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8-02W
VES05991
SCD-80
Jul-30-1998
BBY 10
VES05991
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BFR93AW
Abstract: VSO05561
Text: BFR93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW
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BFR93AW
VSO05561
OT323
900MHz
Jul-30-2001
BFR93AW
VSO05561
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SP6691
Abstract: JUL306 LQH32CN220K21 MBR0530 SP6691EK 4 to 20mA schematic 4FB3
Text: Solved by Design Solution # 28 TM SP6691 2 Cell Alkaline to 4 WLEDs with IOUT = 20mA Date: June 21, 2006 Designed by: Brian Kennedy Part Number: SP6691EK Application Description: 2 Cell Boost to 13V - 14V out at 20mA Electrical Requirements: Input Voltage
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SP6691
SP6691EK
200mA/div
Jul3-06
JUL306
LQH32CN220K21
MBR0530
SP6691EK
4 to 20mA schematic
4FB3
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transistor 30054
Abstract: IC 6601 GH 12v 100 amp battery load tester CAPACITOR chip murata mtbf mbr530 lot date code panasonic 0603 resistor 17000E transistor x1 3003 543e GRM1885C1H470JA01B
Text: Solved by SP6691 TM Micro Power Boost Regulator Series White LED Driver FEATURES • Drives up to 6 LEDs @ 25mA ■ Drives up to 8 LEDs @ 20mA ■ High Output Voltage: Up to 30V ■ Optimized for Single Supply, 2.7V - 4.2V Applications ■ Operates Down to 1V
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SP6691
350mV
350mA)
1/16W
800-Digi-Key
transistor 30054
IC 6601 GH
12v 100 amp battery load tester
CAPACITOR chip murata mtbf
mbr530
lot date code panasonic 0603 resistor
17000E
transistor x1 3003
543e
GRM1885C1H470JA01B
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Untitled
Abstract: No abstract text available
Text: Schem atic: i I Electrical Specifications: @25°C Isolation Voltage: 1500 Vrms Input to Output Turns Ratio: TX 1CT:1CT ±3% RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum 100KHz 100mV BmADC Q: 16 MIN @1 OOKHz 0.1V Cw/w: 27pF Typical @10DKHz 100mV Insertion
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OCR Scan
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PDF
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350uH
10DKHz
100mV
300KHz-100MHz)
30MHz
-18dB
80MHz
MIL-5TD-202G,
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bup3140
Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Text: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code
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OCR Scan
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PDF
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O-218AB
Q67040-A4226-A2
l-30-1996
GPT05155
bup3140
BUP 3140
BUP 300
L30 diode 4 pin
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L-3019
Abstract: c4630 BUP 303 IGBT
Text: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VcE BUP 306D 1200V 23A h Pin 3 C E Package Ordering Code
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OCR Scan
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PDF
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O-218AB
Q67040-A4222-A2
25VGE
Jul-30-1996
PT05156
l-30-1996
L-3019
c4630
BUP 303 IGBT
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