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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-4v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00005-4v0-E
MB85R4001A
MB85R4001A
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-4v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-4v0-E
MB85R4002A
MB85R4002A
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00003-4v0-E
MB85R1001A
MB85R1001A
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-4v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-4v0-E
MB85R1002A
MB85R1002A
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LGA 1156 PIN OUT diagram
Abstract: QFP11T144-002 LGA 1156 Socket diagram 216-LQFP Wells-CTI 36 lead Flat Pack smd AAAS Wells-CTI LCC socket Wells-CTI 880 020 BGA136 Enplas drawings
Text: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and
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land pattern for TSOP 2-44
Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-5v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-5v0-E
MB85R4002A
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TSOP-48 pcb LAYOUT
Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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PAL 007 pioneer
Abstract: pioneer PAL 007 A PAL 008 pioneer sn 7600 n 648-0482211 sem 2106 Trays tsop56 TSOP 86 land pattern amd socket 940 pinout Meritec 980020-56
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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pioneer PAL 007 A
Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00005-3v0-E
MB85R4001A
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label
Abstract: JEDEC TRAY DIMENSIONS - TSOP48
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00005-3v0-E
MB85R4001A
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JEDEC TRAY DIMENSIONS - TSOP48
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00003-3v0-E
MB85R1001A
MB85R1001A
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-3v0-E
MB85R1002A
MB85R1002A
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-3v0-E
MB85R1002A
MB85R1002A
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00003-2v0-E
MB85R1001A
MB85R1001A
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JEDEC TRAY DIMENSIONS - TSOP48
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-3v0-E
MB85R4002A
MB85R4002A
JEDEC TRAY DIMENSIONS - TSOP48
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00003-3v0-E
MB85R1001A
MB85R1001A
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DS-501
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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MB85R1002A
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-3v1-E
MB85R4002A
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48-pin TSOP package tray
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-2v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-2v0-E
MB85R4002A
MB85R4002A
48-pin TSOP package tray
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Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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MB85R4002A
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M29F800FT
Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3
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M29FxxxFT/B
M29F200FT/B,
M29F400FT/B,
M29F800FT/B,
M29F160FT/B
0x01h
M29F200FT:
0x2251
M29F400FT:
0x2223
M29F800FT
m29f800f
M29F400FT
M29F160F
M29F200FT
M29F160FT
M29F800
M29F400F
M29F200F
M29F400FB
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M29F800FT
Abstract: M29F800 M29F400FB M29F400FT
Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3
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M29FxxxFT/B
M29F200FT/B,
M29F400FT/B,
M29F800FT/B,
M29F160FT/B
0x01h
M29F200FT:
0x2251
M29F400FT:
0x2223
M29F800FT
M29F800
M29F400FB
M29F400FT
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