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KAGA FEI America Inc MB85R4001ANC-GE1 IC FRAM 4MBIT PARALLEL 48TSOP
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DigiKey	MB85R4001ANC-GE1	Tray			128	1 - 10 - 100 - 1000 $17.76414 10000 $17.76414	Buy Now
RAMXEED MB85R4001ANC-GE1 4Mbit FRAM (512k x8) parallel interface - TSOP48 tray
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Symmetry Electronics	MB85R4001ANC-GE1				1	1 $12.6 10 $12.6 100 $12.6 1000 $12.6 10000 $12.6	Buy Now
RAMXEED MB85R4001APFCN 4Mbit FRAM x8 parallel TSOP48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Symmetry Electronics	MB85R4001APFCN				1	1 $29.93 10 $29.93 100 $29.93 1000 $29.93 10000 $29.93	Buy Now

MB85R4001A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R4001ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 4MBIT 150NS 48TSOP		Original	PDF

MB85R4001A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MB85R4001ANC-GE1 Abstract: MB85R4001A IC TRAY Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-2v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00005-2v0-E MB85R4001A MB85R4001A MB85R4001ANC-GE1 IC TRAY	PDF
MB85R4001A Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-0v01-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00005-0v01-E MB85R4001A MB85R4001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00012-3v0-E FRAM MB85R4001A MB85R4001A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00012-3v0-E MB85R4001A MB85R4001A FPT-48P-M01)	PDF
MB85R4001A Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-1v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00005-1v0-E MB85R4001A MB85R4001A	PDF
label Abstract: JEDEC TRAY DIMENSIONS - TSOP48 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00005-3v0-E MB85R4001A MB85R4001A label JEDEC TRAY DIMENSIONS - TSOP48	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00005-3v0-E MB85R4001A MB85R4001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-4v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00005-4v0-E MB85R4001A MB85R4001A	PDF