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    JE700 Price and Stock

    onsemi MJE700G

    TRANS PNP DARL 60V 4A TO126
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    DigiKey MJE700G Bulk
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    Newark MJE700G Bulk 1,000
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    onsemi MJE700STU

    TRANS PNP DARL 60V 4A TO126-3
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    DigiKey MJE700STU Tube 1,920
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    Rochester Electronics LLC LP3964ET-ADJ-E7000867

    ADJUSTABLE POSITIVE LDO REGULATO
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    DigiKey LP3964ET-ADJ-E7000867 Bulk 180
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    Texas Instruments LM2595SX-ADJ-E7003032

    IC REG BUCK ADJ 1A TO263
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    Texas Instruments LM2672MX-ADJ-E7000820

    IC REG BUCK ADJ 1A 8SOIC
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    Find more JE700 price and stock on Findchips.com

    JE700 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JE802

    Abstract: No abstract text available
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF MJE800/801/803 JE700/701/702/703 MJE800/801 JE802/803 50fiA JE802

    JE802

    Abstract: JE700 JE803 JE700 MOTOROLA JE702 JE703 JE800 75 watt npn switching transistor MJE700T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T M JE702 Plastic Darlington Com plem entary Silicon Power Transistors M JE703 . . . designed lor general-purpose amplifier and low-speed switching applications. • • • High DC Current Gain — hFE = 2000 Typ @ lc = 2.0 Adc


    OCR Scan     		PDF JE700 JE702 JE703 JE800 JE802 JE803 MJE700 MJE800 T0220AB, MJE700T JE803 JE700 MOTOROLA 75 watt npn switching transistor

    JE7001

    Abstract: JE700
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE7001 DESCRIPTION The JE7001 is an NPN silicon epitaxial transistor intended PACKAGE DIMENSIONS for use as VHF and UHF oscillators and a VHF mixer in a in millimeters inches tuner o f a TV receiver. The device features stable oscillation and small frequency


    OCR Scan     		PDF JE7001 JE7001 10psT JE700

    sot 23 transistor 70.2

    Abstract: LTA 702 N k/702 P transistor
    Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS


    OCR Scan     		PDF JE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 GQG77fe sot 23 transistor 70.2 LTA 702 N k/702 P transistor

    702 TRANSISTOR npn

    Abstract: MJE800 702 Z TRANSISTOR darlington transistor with built-in temperature MJE802 mje801
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF MJE800/801/803 MJE700/701/702/703 MJE800/801 MJE802/803 O-126 Characterist1/803 702 TRANSISTOR npn MJE800 702 Z TRANSISTOR darlington transistor with built-in temperature MJE802 mje801

    JE800

    Abstract: JE802 JE702 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE700T MJE800T
    Text: MOTOROLA Order this document by JE700/D SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T Plastic Darlington Com plem entary Silicon Power Transistors M JE702 M JE703 . . . designed for general-purpose amplifier and low -speed switching applications. • • •


    OCR Scan     		PDF MJE700/D MJE700 MJE800 T0220AB, MJE700T MJE800T JE700 JE702 JE703 JE800 JE802 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE800T

    MJFR

    Abstract: JE700 MJE302 JE801 JE300 MJC800 MJ6703 AAJC703 mje801 MJE703
    Text: PNP JE700, T thru MJE703, T NPN MJE800, T thru MJE803, T 4 0 AM PERE P L A S T IC D A R L IN G T O N C O M P L E M E N T A R Y D A R L IN G T O N S IL IC O N P O W E R T R A N S IS T O R S P O W E R T R A N S IS T O R S C O M P L E M E N T A R Y S IL IC O N


    OCR Scan     		PDF MJE700, MJE703, MJE800, MJE803, MJE800 MiC700 MJE701 MJCS01 MJE707 AAJC703 MJFR JE700 MJE302 JE801 JE300 MJC800 MJ6703 mje801 MJE703

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    8115, transistor

    Abstract: JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors 50-WATT MJE603 JE701 MJE700T mje801
    Text: MOTORGLA SC 1SE D I b3b?2SM 0005333 fl XSTRS/R F I T-33-33 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN JE700J thru MIE703 MJE800J thru MJE803 4.0 AMPERE PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose am p lifie r and low-speed switching


    OCR Scan     		PDF T-33-33 MJE700J MIE703 MJE800J MJE803 Q0aS33b MJE703 MJE800 8115, transistor JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors 50-WATT MJE603 JE701 MJE700T mje801

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    JE800

    Abstract: JE702 mje800 JE700
    Text: f Z 7 SCS-THOMSON ^ 7 # fifflD æ m iC T «! S_G MJ E800/1 /2/3 JE700/1/2/3 S-TH O M S O N 3GE ]> MEDIUM POWER DARLINGTONS D ESCRIPTIO N The MJE800, MJE801, MJE802 and MJE803 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­


    OCR Scan     		PDF E800/1 MJE700/1/2/3 MJE800, MJE801, MJE802 MJE803 O-126 MJE700, MJE701, MJE702 JE800 JE702 mje800 JE700

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


    OCR Scan     		PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    JE2901

    Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
    Text: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5


    OCR Scan     		PDF 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 2N6045 JE2901 JE802T JE802 JE801T JE702 LM3661TL-1.40

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    702 y TRANSISTOR

    Abstract: JE701 JE700 702 P TRANSISTOR je 701
    Text: r n r e n i maiml JE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701

    JE800

    Abstract: JE802 JE702
    Text: SELECTION GUIDES BASED ON TECHNOLOGY AND PACKAGES EPITAXIAL BA SE N P N anc P N P typos perfect com plem entary pairs M edium V C e o range (22 to 100 V) M edium sw itching speed M edium fT (2 to 20 M H z) H igh ru gge d n e ss M onolithic Darlington capability


    OCR Scan     		PDF -TO-126 BD441 BD681 JE800 JE801 JE802 JE803 2N5190 2N5191 2N5192 JE702

    JE702

    Abstract: 702 TRANSISTOR
    Text: m r c ri i maiml JE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF MJE700/701 JE800/801/802/803 MJE700/701 JE702/703 JE701/703 JE702 702 TRANSISTOR

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


    OCR Scan     		PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175