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    Text: SAMSUNG ELECTRONICS INC 42E D MPSH10/11 Hi ?*Jb414H 000^072 4 E3SÎ1GK NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 ° C )


    OCR Scan     		PDF MPSH10/11 Jb414H