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    Microchip Technology Inc JANTXV2N5662

    TRANS NPN 200V 2A TO5
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    Microchip Technology Inc JANTXV2N5662 348 22 Weeks
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    VPT Components JANTXV2N5662

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    PPC Products Corp JANTXV2N5662

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    Quest Components JANTXV2N5662 4
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    Microchip Technology Inc JANTXV2N5662-LC

    Power BJT
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    JANTXV 2N5662 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JANTXV2N5662 Microsemi NPN Transistor Original PDF
    JANTXV 2N5662 Unitrode International Semiconductor Data Book 1981 Scan PDF
    JANTXV2N5662 Unitrode International Semiconductor Data Book 1981 Scan PDF

    JANTXV 2N5662 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original
    PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    2N5662JX

    Abstract: 2N5662 2N5662J 2N5662JV
    Text: 2N5662 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5662J • JANTX level (2N5662JX)


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    PDF 2N5662 MIL-PRF-19500 2N5662J) 2N5662JX) 2N5662JV) MIL-STD-750 2N5662JX 2N5662 2N5662J 2N5662JV

    Untitled

    Abstract: No abstract text available
    Text: 2N5662 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


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    PDF 2N5662 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5662 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


    Original
    PDF 2N5662 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5662 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 200V 0.41 (0.016)


    Original
    PDF 2N5662 O205AD) 1-Aug-02

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1481 *


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    PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    454D

    Abstract: 2N5660 2N5661 2N5662 2N5663 C-48U MC 3041
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 October 2001. INCH-POUND MIL-PRF-19500/454D 27 July 2001 SUPERSEDING MIL-PRF-19500/454C 19 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER


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    PDF MIL-PRF-19500/454D MIL-PRF-19500/454C 2N5660, 2N5661, 2N5662, 2N5663, MIL-PRF-19500. 2N5660 454D 2N5661 2N5662 2N5663 C-48U MC 3041

    2N5662

    Abstract: 2N5663 2N5661 TO-5 1000C 2N5660 2N5661 TO-213
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 Qualified Level 2N5661 2N5662 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


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    PDF MIL-PRF-19500/454 2N5660 2N5661 2N5662 1000C 2N5663 2N5660 2N5662 2N5663 2N5661 TO-5 1000C 2N5661 TO-213

    2N5661

    Abstract: 2N5662 IC 1458 1000C 2N5660 2N5663 JANTXV 2N5662
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 Qualified Level 2N5661 2N5662 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


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    PDF MIL-PRF-19500/454 2N5660 2N5661 2N5662 1000C 2N5663 2N5660 2N5662 2N5661 IC 1458 1000C 2N5663 JANTXV 2N5662

    2N5660U3

    Abstract: 2N5660 2N5661 2N5662 2N5663
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 May 2007. MIL-PRF-19500/454G 13 February 2007 SUPERSEDING MIL-PRF-19500/454F 20 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER


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    PDF MIL-PRF-19500/454G MIL-PRF-19500/454F 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662, 2N5663, MIL-PRF-19500. 2N5660U3 2N5660 2N5661 2N5662 2N5663

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON TRANSISTOR


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    PDF MIL-PRF-19500/454 2N5660 2N5660U3 2N5661 2N5661U3 2N5662 2N5663

    2N5662

    Abstract: 2N5660 2N5661 2N5663 300Vdc 000-inch 2N5660U3 2N5663 equivalent
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON TRANSISTOR


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    PDF MIL-PRF-19500/454 2N5660 2N5660U3 2N5661 2N5661U3 2N5662 2N5663 2N5662 2N5660 2N5661 2N5663 300Vdc 000-inch 2N5660U3 2N5663 equivalent

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N


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    PDF 2N5660 2N5661 2N5662 2N5663 MIL-S-19500/454 2N5660, 2N5661 25iTlA

    2N5862

    Abstract: 2N5660 3051 3026LS 2N5680 3036 100CC 2N5661 2N5662 2N5663
    Text: JAN, JAN, JAN, JAN, POWER TRANSISTORS 2 Amp, 300V, Planar NPN FEA TU R ES • Meets MlL-S-19500/454 • Collector-Base Voltage: up to 400V » D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & JANTXV 2N5660


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    PDF 2N5660 2N5661 2N5662 2N5663 MlL-S-19500/454 2N5660 2N5662 2N5661, 2NS663 2N5862 3051 3026LS 2N5680 3036 100CC 2N5663

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


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    MIL-S-19500

    Abstract: U2T305 U2T10 2N5157 JANTX U2T205 2N1016D UPT311 U2T713 2N1050A JAN UNITRODE TRANSISTORS
    Text: SUMMARY LIST OF API/SPC Q.P.L. DIRECTORY TYPES QUALIFICATION COMPLETE 2N5660-JAN,JAN-TX,JAN-TXV 2N5661-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 MIL-S-19500/454 2N5662-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 2N5653-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 2N1016B-JAN 2N1016C-JAN


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    PDF 2N5660-JAN 2N5661-JAN 2N5662-JAN 2N5653-JAN 2N1016B-JAN 2N1016C-JAN 2N1016D-JAN 2N1483-JAN 2N1484-JAN 2N1485-JAN MIL-S-19500 U2T305 U2T10 2N5157 JANTX U2T205 2N1016D UPT311 U2T713 2N1050A JAN UNITRODE TRANSISTORS

    406j transistor

    Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and


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    PDF 14-PtN 406j transistor 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


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    PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    2H2904

    Abstract: 2NI483-86
    Text: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879


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    PDF 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714- 2N1722 2N1724 2N2015 2H2904

    IC IL 117

    Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 [email protected]/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5


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    PDF O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A IC IL 117 2N5339A transistor sit TRANSISTOR 800h

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 [email protected]/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b


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    PDF O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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