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Toshiba America Electronic Components TJ20A10M3(STA4,Q TJ20A10M3(STA4,Q
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TJ20A10M3(STA4,Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc SMDJ20A-100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SMDJ20A-100		722		5	1 - 10 $1.05 100 $0.3938 1000 $0.294 10000 $0.294	Buy Now

J20A10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J20A10M Abstract: TJ20A10M3 J20A10 J20A10M3 Text: J20A10M3 東芝電界効果トランジスタシリコンPチャネルMOS形 U-MOSⅥ J20A10M3 ○ スイッチングレギュレータ用単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: \|Yfs\|= 50 S (標準)	Original	PDF	TJ20A10M3 SC-67 2-10U1B J20A10M TJ20A10M3 J20A10 J20A10M3
J20A10 Abstract: J20A10M J20A10M transistor TJ20A10M3 Text: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)	Original	PDF	TJ20A10M3 J20A10 J20A10M J20A10M transistor TJ20A10M3
J20A10M Abstract: J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3 Text: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)	Original	PDF	TJ20A10M3 J20A10M J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3
J20A10M transistor Abstract: J20A10M J20A10 Text: J20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI J20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)	Original	PDF	TJ20A10M3 J20A10M transistor J20A10M J20A10