Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    J175 TRANSISTOR Search Results

    J175 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    J175 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J174

    Abstract: j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking
    Text: Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information Information as of 2001-11-13 J174; J175; J176; J177; P-channel


    Original     		PDF rework/j174 J174 j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking

    EQUIVALENT FOR J175

    Abstract: J175 EQUIVALENT FOR J174 J177 J176. P-CHANNEL. TO-92 J177 equivalent J174 equivalent J176 J174 EQUIVALENT FOR J176
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors


    Original     		PDF MAM388 EQUIVALENT FOR J175 J175 EQUIVALENT FOR J174 J177 J176. P-CHANNEL. TO-92 J177 equivalent J174 equivalent J176 J174 EQUIVALENT FOR J176

    Untitled

    Abstract: No abstract text available
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23

    j174 transistor

    Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23 j174 transistor J175 J174 J176 J177 MMBFJ176 MMBFJ177 J175 transistor transistor j175

    j177 TRANSISTOR

    Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23 j177 TRANSISTOR J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ176 MMBFJ177 J177 TO-92

    Untitled

    Abstract: No abstract text available
    Text: P-Channel MOSFET Transistors Part No. J174 J175 Drain-Source On-State Braekdown DS Current Voltage BVDSS V ID(ON)(A) 30.00 30.00 1.00 .50 Static DS Resistance Part No. RDS(ON)(Ω) 85 125 J176 J270 Drain-Source On-State Braekdown DS Current Voltage Static DS


    Original     		PDF IRF9520 IRF9540 IRF9610 IRF9640 50/Tube IRF9Z20

    B52 transistor

    Abstract: J174 J175 transistor j174 EQUIVALENT J175 j174 transistor PJ99 SMPJ174 SMPJ175
    Text: Databook.fxp 1/13/99 2:09 PM Page B-52 B-52 01/99 J174, J175 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF 226AA SMPJ174, SMPJ175 B52 transistor J174 J175 transistor j174 EQUIVALENT J175 j174 transistor PJ99 SMPJ174 SMPJ175

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    2sj44

    Abstract: J177 equivalent PJ99 j177 equivalent transistor
    Text: Databook.fxp 1/13/99 2:09 PM Page F-30 F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		PDF 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 J177 equivalent PJ99 j177 equivalent transistor

    J175

    Abstract: J174 J176 J177
    Text: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.


    OCR Scan     		PDF M89-1045/RC J175 J174 J176 J177

    S75 J175

    Abstract: No abstract text available
    Text: FM M J174 to FMMJ177 SOT23 P-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J174 FM M J175 FMMJ1 76 FM M J177 - S74 S75 S76 S77 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or Gate-Source Voltage 30V Continous Forward Gate Current


    OCR Scan     		PDF FMMJ177 225mW S75 J175

    "P-Channel JFETs"

    Abstract: 2N5116
    Text: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92


    OCR Scan     		PDF tSD113D T-39-01 "P-Channel JFETs" 2N5116

    J174

    Abstract: J177 J176 J175
    Text: m bbS3*ì31 N AMER DOBMOtn 7DÖ « A P X PHILIPS/DISCRETE b ?E J174 TO 177 D P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel ju nction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc.


    OCR Scan     		PDF D0240CH 7Z949B2 J174 J177 J176 J175

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.


    OCR Scan     		PDF bb53T31 DQ240CH

    Untitled

    Abstract: No abstract text available
    Text: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.


    OCR Scan     		PDF

    FMMJ174

    Abstract: MJ176
    Text: FMM J174 to FMMJ177 SOT23 P-CHAMNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM MJ174 FM MJ175 FM MJ176 FM MJ177 - S74 S75 S76 S77 ABSOLUTE MAXIMUM RATINGS at Tamb = 25°C Gate Drain or Gate-Source Voltage 30 V Continous Forward Gate Current


    OCR Scan     		PDF MJ174 MJ175 MJ176 MJ177 FMMJ177 DS167 FMMJ174

    Bsv80

    Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78


    OCR Scan     		PDF BSV78 BSV79 BSV80 BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 Bsv80 2N4092 2N4392 Philips J176 PMBF PMBFJ174

    J174

    Abstract: J176 MPF970 j177 J175 j175 motorola
    Text: J174 thru J177* C A SE 29-04, STYLE 30 TO-92 TO-226AA f MAXIMUM RATINGS Rating Sym bol Value Unit Drain-Source Voltage Vd S 30 Vdc Drain-Gate Voltage Vdg 30 Vdc Gate-Source Voltage VGS 30 Vdc Gate Current Total Device Dissip ation Derate above 2 5 ’C <a


    OCR Scan     		PDF O-226AA) MPF970 J174 J176 j177 J175 j175 motorola

    BF991

    Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485


    OCR Scan     		PDF 2N5484 2N5485 2N5486 BF245A BF245B BF245C BF410A BF410B BF410C BF410D BF991 BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174

    2N489

    Abstract: 2N494 2N489A 2N34 TRANSISTOR 2N492 2N491A Germanium power
    Text: Germanium Power Devices Corp Specifications SILICON UNIJUNCTION TRANSISTOR SIÚCON TYPES 2N489.A.B I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ X ” type negative resistance characteristic over a wide tem perature range. A stable peak point


    OCR Scan     		PDF

    PMBFJ174

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number characteristics - RD S o n ^ max. (Q) ± V DS -IG max. max. (mA) min. (mA)


    OCR Scan     		PDF 2N5116 2N5460 2N5461 2N5462 PMBFJ174 PMBFJ175 PMBFJ176

    Untitled

    Abstract: No abstract text available
    Text: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5


    OCR Scan     		PDF 2N5018 2N5019 2N5114 2N5115 2N5116 P1086 P1087

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


    OCR Scan     		PDF 2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960

    transistor gfs

    Abstract: 2N5116 J176 2N3993 2N3993A IFP44 J174 J175 J177 P1086
    Text: G 30 9-97 PJ99 Process SILICON JU N C T IO N FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, T s 10 mA +150°C -65°C to +175°C


    OCR Scan     		PDF IFP44 P1086, P1087 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 transistor gfs J176 2N3993 IFP44 J174 J175 J177 P1086